UV Random Lasing Action in p‐SiC(4H)/i‐ZnO–SiO 2 Nanocomposite/n‐ZnO:Al Heterojunction Diodes
Gespeichert in:
Veröffentlicht in: | Advanced materials (Weinheim) 2006-07, Vol.18 (13), p.1685-1688 |
---|---|
Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 1688 |
---|---|
container_issue | 13 |
container_start_page | 1685 |
container_title | Advanced materials (Weinheim) |
container_volume | 18 |
creator | Leong, E. S. P. Yu, S. F. |
description | |
doi_str_mv | 10.1002/adma.200502761 |
format | Article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1002_adma_200502761</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1002_adma_200502761</sourcerecordid><originalsourceid>FETCH-LOGICAL-c841-4dde2153ddd7a1c1abf9b59309f3bc7ef8f5cf0bf923c3500e94b8cfddd55c333</originalsourceid><addsrcrecordid>eNo9kL1OwzAURi0EEqGwMnuEIc21HScxW1UKRaqoRAsDS-T4B7lq7CouA1sfAYk37JOQqojpXt3v09HVQeiawJAA0EzqVg4pAAdaFuQEJYRTkuYg-ClKQDCeiiKvztFFjCsAEAUUCTKvb_hFeh1aPJPR-Q88UlsXPHYeb_a774Ub3-TT28z1-7uf73c_CzfHFD9LH1RoNyG6rcn8Mb0brfHUbE0XVp_-iLl3QZt4ic6sXEdz9TcHaPkwWY6n6Wz--DQezVJV5f2rWhtKONNal5IoIhsrGi4YCMsaVRpbWa4s9FfKFOMARuRNpWzf51wxxgZoeMSqLsTYGVtvOtfK7qsmUB8c1QdH9b8j9guqlF41</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>UV Random Lasing Action in p‐SiC(4H)/i‐ZnO–SiO 2 Nanocomposite/n‐ZnO:Al Heterojunction Diodes</title><source>Access via Wiley Online Library</source><creator>Leong, E. S. P. ; Yu, S. F.</creator><creatorcontrib>Leong, E. S. P. ; Yu, S. F.</creatorcontrib><identifier>ISSN: 0935-9648</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.200502761</identifier><language>eng</language><ispartof>Advanced materials (Weinheim), 2006-07, Vol.18 (13), p.1685-1688</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c841-4dde2153ddd7a1c1abf9b59309f3bc7ef8f5cf0bf923c3500e94b8cfddd55c333</citedby><cites>FETCH-LOGICAL-c841-4dde2153ddd7a1c1abf9b59309f3bc7ef8f5cf0bf923c3500e94b8cfddd55c333</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Leong, E. S. P.</creatorcontrib><creatorcontrib>Yu, S. F.</creatorcontrib><title>UV Random Lasing Action in p‐SiC(4H)/i‐ZnO–SiO 2 Nanocomposite/n‐ZnO:Al Heterojunction Diodes</title><title>Advanced materials (Weinheim)</title><issn>0935-9648</issn><issn>1521-4095</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNo9kL1OwzAURi0EEqGwMnuEIc21HScxW1UKRaqoRAsDS-T4B7lq7CouA1sfAYk37JOQqojpXt3v09HVQeiawJAA0EzqVg4pAAdaFuQEJYRTkuYg-ClKQDCeiiKvztFFjCsAEAUUCTKvb_hFeh1aPJPR-Q88UlsXPHYeb_a774Ub3-TT28z1-7uf73c_CzfHFD9LH1RoNyG6rcn8Mb0brfHUbE0XVp_-iLl3QZt4ic6sXEdz9TcHaPkwWY6n6Wz--DQezVJV5f2rWhtKONNal5IoIhsrGi4YCMsaVRpbWa4s9FfKFOMARuRNpWzf51wxxgZoeMSqLsTYGVtvOtfK7qsmUB8c1QdH9b8j9guqlF41</recordid><startdate>20060704</startdate><enddate>20060704</enddate><creator>Leong, E. S. P.</creator><creator>Yu, S. F.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20060704</creationdate><title>UV Random Lasing Action in p‐SiC(4H)/i‐ZnO–SiO 2 Nanocomposite/n‐ZnO:Al Heterojunction Diodes</title><author>Leong, E. S. P. ; Yu, S. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c841-4dde2153ddd7a1c1abf9b59309f3bc7ef8f5cf0bf923c3500e94b8cfddd55c333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Leong, E. S. P.</creatorcontrib><creatorcontrib>Yu, S. F.</creatorcontrib><collection>CrossRef</collection><jtitle>Advanced materials (Weinheim)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Leong, E. S. P.</au><au>Yu, S. F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>UV Random Lasing Action in p‐SiC(4H)/i‐ZnO–SiO 2 Nanocomposite/n‐ZnO:Al Heterojunction Diodes</atitle><jtitle>Advanced materials (Weinheim)</jtitle><date>2006-07-04</date><risdate>2006</risdate><volume>18</volume><issue>13</issue><spage>1685</spage><epage>1688</epage><pages>1685-1688</pages><issn>0935-9648</issn><eissn>1521-4095</eissn><doi>10.1002/adma.200502761</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0935-9648 |
ispartof | Advanced materials (Weinheim), 2006-07, Vol.18 (13), p.1685-1688 |
issn | 0935-9648 1521-4095 |
language | eng |
recordid | cdi_crossref_primary_10_1002_adma_200502761 |
source | Access via Wiley Online Library |
title | UV Random Lasing Action in p‐SiC(4H)/i‐ZnO–SiO 2 Nanocomposite/n‐ZnO:Al Heterojunction Diodes |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T17%3A45%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=UV%20Random%20Lasing%20Action%20in%20p%E2%80%90SiC(4H)/i%E2%80%90ZnO%E2%80%93SiO%202%20Nanocomposite/n%E2%80%90ZnO:Al%20Heterojunction%20Diodes&rft.jtitle=Advanced%20materials%20(Weinheim)&rft.au=Leong,%20E.%E2%80%89S.%E2%80%89P.&rft.date=2006-07-04&rft.volume=18&rft.issue=13&rft.spage=1685&rft.epage=1688&rft.pages=1685-1688&rft.issn=0935-9648&rft.eissn=1521-4095&rft_id=info:doi/10.1002/adma.200502761&rft_dat=%3Ccrossref%3E10_1002_adma_200502761%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |