Er/Yb Doped Porous Silicon-A Novel White Light Source

Er/Yb Doped Porous Silicon-A Novel White Light Source

A constant voltage electrochemical doping method, is used in order to successfully introduce elemental erbium, Er and ytterbium, Yb into the pores of porous silicon. Er/Yb doped porous silicon emits efficiently from the UV to near‐IR when excited with a 980 nm line laser (see Figure).

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2004-09, Vol.16 (18), p.1664-1667
Hauptverfasser: Luo, L., Zhang, X. X., Li, K. F., Cheah, K. W., Shi, J. X., Wong, W. K., Gong, M. L.
Format: Artikel
Sprache:eng
Schlagworte:
Doping
Light-emitting materials
Luminescence
porous
Porous materials
Silicon
Silicon, porous
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A constant voltage electrochemical doping method, is used in order to successfully introduce elemental erbium, Er and ytterbium, Yb into the pores of porous silicon. Er/Yb doped porous silicon emits efficiently from the UV to near‐IR when excited with a 980 nm line laser (see Figure).
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200306609