Influence of polar substituents on the epitaxy of oligothiophenes on graphite: A systematic STM investigation

Influence of polar substituents on the epitaxy of oligothiophenes on graphite: A systematic STM investigation

The variation of substituents of oligothiophenes can be used to control the epitaxy of the materials through systematic modification of intermolecular interactions. The STM characterization of new oligothiophenes (e.g. see Figure) is reported and is shown to provide useful structural information on...

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Veröffentlicht in:Advanced materials (Weinheim) 1996-09, Vol.8 (9), p.733-737
Hauptverfasser: Müller, Horst, Petersen, Jörg, Strohmaier, Rainer, Gompf, Bruno, Eisenmenger, Wolfgang, Vollmer, Martin S., Effenberger, Franz
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container_end_page 737
container_issue 9
container_start_page 733
container_title Advanced materials (Weinheim)
container_volume 8
creator Müller, Horst
Petersen, Jörg
Strohmaier, Rainer
Gompf, Bruno
Eisenmenger, Wolfgang
Vollmer, Martin S.
Effenberger, Franz
description The variation of substituents of oligothiophenes can be used to control the epitaxy of the materials through systematic modification of intermolecular interactions. The STM characterization of new oligothiophenes (e.g. see Figure) is reported and is shown to provide useful structural information on the supramolecular assemblies which have potential in molecular optical and electronic applications.
doi_str_mv 10.1002/adma.19960080905
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title Influence of polar substituents on the epitaxy of oligothiophenes on graphite: A systematic STM investigation
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