The formation of silicon carbide films from disilane derivatives

The formation of silicon carbide films presents problems arising from the fact that the precursors employed are usually a mixture of compounds. It is demonstrated that high‐quality silicon carbide films (see Figure) can be produced by chemical vapor deposition using easily available disilane derivat...

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Veröffentlicht in:	Advanced materials (Weinheim) 1994-07, Vol.6 (7-8), p.584-587
Hauptverfasser:	Hengge, Edwin, Zechmann, Arno, Hofer, Ferdinand, Pölt, Peter, Lux, Benno, Danzinger, Michael, Haubner, Roland
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
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container_title	Advanced materials (Weinheim)
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creator	Hengge, Edwin Zechmann, Arno Hofer, Ferdinand Pölt, Peter Lux, Benno Danzinger, Michael Haubner, Roland
description	The formation of silicon carbide films presents problems arising from the fact that the precursors employed are usually a mixture of compounds. It is demonstrated that high‐quality silicon carbide films (see Figure) can be produced by chemical vapor deposition using easily available disilane derivatives as the precursor.
doi_str_mv	10.1002/adma.19940060713
format	Article
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subjects	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
title	The formation of silicon carbide films from disilane derivatives
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