Approaching Charge Compensation Limit for Promoting Magnetoresistance in 2D Nonlayered MoO 2 via Surface Hydrogen Passivation

Large non‐saturated magnetoresistances of semimetals are dominated by charge compensation due to their unique electronic structure. However, the dramatic magnetoresistance deteriorations are often observed in low‐dimensional system resulting from high‐density surface defects, where the suppression o...

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Veröffentlicht in:	Advanced functional materials 2025-01
Hauptverfasser:	Chen, Huanzhi, Tian, Zongkui, Zhou, Xilong, Fan, Xiulian, Li, Zian, Li, Cheng, Niu, Chenyang, Chu, Wenlong, Zhou, Yuqi, He, Liqi, Yang, Yumeng, Peng, Zheng, Zhou, Yu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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