Group‐VA Doped ZnO Injection Layer for Bright and Efficient Perovskite Light‐Emitting Diodes

Heteroatom doping of the ZnO electron injection layer (EIL) is widely applied to the fabrication of high‐performance quantum‐dot and perovskite light‐emitting diodes (PeLEDs), while group‐VA atomic dopant is rarely studied. Here, VA bismuth (Bi) with strong metallicity is screened as a substitution...

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Veröffentlicht in:	Advanced functional materials 2024-11
Hauptverfasser:	Yang, Xiaoyu, Ji, Yongqiang, Li, Qiuyang, Zhong, Qixuan, Li, Hong, Lu, Zhangyuchang, Chen, Hao‐Hsin, Wang, Yanju, Hu, An, Li, Shunde, Ma, Li, Li, Le, Zhang, Yuzhuo, Chen, Yu, Zhao, Lichen, Wu, Jiang, Wang, Xinqiang, Lu, Changjun, Zhu, Rui
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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