MoS 2 /HfO 2 /Silicon‐On‐Insulator Dual‐Photogating Transistor with Ambipolar Photoresponsivity for High‐Resolution Light Wavelength Detection

Photogating detectors based on 2D materials attract significant research interests. However, most of these photodetectors are only sensitive to the incident intensities and lack the ability to distinguish different wavelengths. Color imaging based on these detectors usually requires additional optic...

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Veröffentlicht in:	Advanced functional materials 2019-11, Vol.29 (46)
Hauptverfasser:	Deng, Jianan, Zong, Lingyi, Zhu, Mingsai, Liao, Fuyou, Xie, Yuying, Guo, Zhongxun, Liu, Jian, Lu, Bingrui, Wang, Jianlu, Hu, Weida, Zhou, Peng, Bao, Wenzhong, Wan, Jing
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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