Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center

The optically active carbon related G‐center is attracting great interest because of evidence that it can provide lasing in silicon. Here a technique to form the G‐center in silicon is reported. The carbon G‐center is generated by implantation of carbon followed by proton irradiation. Photoluminesce...

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Veröffentlicht in:	Advanced functional materials 2012-07, Vol.22 (13), p.2709-2712
Hauptverfasser:	Berhanuddin, Dilla D., Lourenço, Manon A., Gwilliam, Russell M., Homewood, Kevin P.
Format:	Artikel
Sprache:	eng
Schlagworte:	optically active materials photoluminescence photonics semiconductors
Online-Zugang:	Volltext
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