Facile Fabrication of SWCNT/SnO 2 Nanowire Heterojunction Devices on Flexible Polyimide Substrate
We report on the fabrication and electronic properties of single‐walled carbon nanotube (SWCNT)/tin oxide nanowire (SnO 2 NW) heterojunction device arrays on flexible polyimide (PI) substrates. Hetero‐NW junctions consisting of crossed SnO 2 NWs and SWCNTs were fabricated by sliding transfer of SnO...
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| Veröffentlicht in: | Advanced functional materials 2011-11, Vol.21 (21), p.4159-4165 |
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| container_title | Advanced functional materials |
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| creator | Park, Jaehyun Kim, Yoonchul Kim, Gyu‐Tae Ha, Jeong Sook |
| description | We report on the fabrication and electronic properties of single‐walled carbon nanotube (SWCNT)/tin oxide nanowire (SnO
2
NW) heterojunction device arrays on flexible polyimide (PI) substrates. Hetero‐NW junctions consisting of crossed SnO
2
NWs and SWCNTs were fabricated by sliding transfer of SnO
2
NWs onto the SWCNT channels on PI substrate. Individual SWCNTs and SnO
2
NWs field effect transistors showed p‐ and n‐type transfer properties with current on/off ratios of 7.0 × 10
5
and 2.7 × 10
6
, respectively. The heterojunction diode showed a rectifying behavior with a rectification ratio of higher than 10
3
at ±1 V and the analysis with an equivalent circuit model of serially connected diode and resistor estimated an ideality factor of 1.5 and the resistance of 20 MΩ. The rectification of AC input signal was clearly demonstrated by fabricating a full‐wave bridge circuit of heterojunctions. In addition, the heterojunctions showed a high UV photosensitivity of ∼10
4
under reverse bias, suggesting their implicit applications in UV sensors. |
| doi_str_mv | 10.1002/adfm.201101470 |
| format | Article |
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2
NW) heterojunction device arrays on flexible polyimide (PI) substrates. Hetero‐NW junctions consisting of crossed SnO
2
NWs and SWCNTs were fabricated by sliding transfer of SnO
2
NWs onto the SWCNT channels on PI substrate. Individual SWCNTs and SnO
2
NWs field effect transistors showed p‐ and n‐type transfer properties with current on/off ratios of 7.0 × 10
5
and 2.7 × 10
6
, respectively. The heterojunction diode showed a rectifying behavior with a rectification ratio of higher than 10
3
at ±1 V and the analysis with an equivalent circuit model of serially connected diode and resistor estimated an ideality factor of 1.5 and the resistance of 20 MΩ. The rectification of AC input signal was clearly demonstrated by fabricating a full‐wave bridge circuit of heterojunctions. In addition, the heterojunctions showed a high UV photosensitivity of ∼10
4
under reverse bias, suggesting their implicit applications in UV sensors.</description><identifier>ISSN: 1616-301X</identifier><identifier>EISSN: 1616-3028</identifier><identifier>DOI: 10.1002/adfm.201101470</identifier><language>eng</language><ispartof>Advanced functional materials, 2011-11, Vol.21 (21), p.4159-4165</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c840-6a154bf0ef3ebea1d617e99789bed9468b081370b02bb14e5ed97d409f35abb93</citedby><cites>FETCH-LOGICAL-c840-6a154bf0ef3ebea1d617e99789bed9468b081370b02bb14e5ed97d409f35abb93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Park, Jaehyun</creatorcontrib><creatorcontrib>Kim, Yoonchul</creatorcontrib><creatorcontrib>Kim, Gyu‐Tae</creatorcontrib><creatorcontrib>Ha, Jeong Sook</creatorcontrib><title>Facile Fabrication of SWCNT/SnO 2 Nanowire Heterojunction Devices on Flexible Polyimide Substrate</title><title>Advanced functional materials</title><description>We report on the fabrication and electronic properties of single‐walled carbon nanotube (SWCNT)/tin oxide nanowire (SnO
2
NW) heterojunction device arrays on flexible polyimide (PI) substrates. Hetero‐NW junctions consisting of crossed SnO
2
NWs and SWCNTs were fabricated by sliding transfer of SnO
2
NWs onto the SWCNT channels on PI substrate. Individual SWCNTs and SnO
2
NWs field effect transistors showed p‐ and n‐type transfer properties with current on/off ratios of 7.0 × 10
5
and 2.7 × 10
6
, respectively. The heterojunction diode showed a rectifying behavior with a rectification ratio of higher than 10
3
at ±1 V and the analysis with an equivalent circuit model of serially connected diode and resistor estimated an ideality factor of 1.5 and the resistance of 20 MΩ. The rectification of AC input signal was clearly demonstrated by fabricating a full‐wave bridge circuit of heterojunctions. In addition, the heterojunctions showed a high UV photosensitivity of ∼10
4
under reverse bias, suggesting their implicit applications in UV sensors.</description><issn>1616-301X</issn><issn>1616-3028</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AURQdRsFa3rucPpH0vM8kkS6nGCqUVUtBdmEnewJR8yEyq9t_bqnR1D5fLXRzG7hFmCBDPdWO7WQyIgFLBBZtgimkkIM4uz4zv1-wmhB0AKiXkhOlC164lXmjjXa1HN_R8sLx8W6y387Lf8JivdT98OU98SSP5Ybfv69_ZI326mgI_YtHStzPHm9ehPbjONcTLvQmj1yPdsiur20B3_zll2-Jpu1hGq83zy-JhFdWZhCjVmEhjgawgQxqbFBXlucpyQ00u08xAhkKBgdgYlJQcW9VIyK1ItDG5mLLZ323thxA82erDu077Q4VQnfxUJz_V2Y_4Af0MWaM</recordid><startdate>20111108</startdate><enddate>20111108</enddate><creator>Park, Jaehyun</creator><creator>Kim, Yoonchul</creator><creator>Kim, Gyu‐Tae</creator><creator>Ha, Jeong Sook</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20111108</creationdate><title>Facile Fabrication of SWCNT/SnO 2 Nanowire Heterojunction Devices on Flexible Polyimide Substrate</title><author>Park, Jaehyun ; Kim, Yoonchul ; Kim, Gyu‐Tae ; Ha, Jeong Sook</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c840-6a154bf0ef3ebea1d617e99789bed9468b081370b02bb14e5ed97d409f35abb93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Jaehyun</creatorcontrib><creatorcontrib>Kim, Yoonchul</creatorcontrib><creatorcontrib>Kim, Gyu‐Tae</creatorcontrib><creatorcontrib>Ha, Jeong Sook</creatorcontrib><collection>CrossRef</collection><jtitle>Advanced functional materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Jaehyun</au><au>Kim, Yoonchul</au><au>Kim, Gyu‐Tae</au><au>Ha, Jeong Sook</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Facile Fabrication of SWCNT/SnO 2 Nanowire Heterojunction Devices on Flexible Polyimide Substrate</atitle><jtitle>Advanced functional materials</jtitle><date>2011-11-08</date><risdate>2011</risdate><volume>21</volume><issue>21</issue><spage>4159</spage><epage>4165</epage><pages>4159-4165</pages><issn>1616-301X</issn><eissn>1616-3028</eissn><abstract>We report on the fabrication and electronic properties of single‐walled carbon nanotube (SWCNT)/tin oxide nanowire (SnO
2
NW) heterojunction device arrays on flexible polyimide (PI) substrates. Hetero‐NW junctions consisting of crossed SnO
2
NWs and SWCNTs were fabricated by sliding transfer of SnO
2
NWs onto the SWCNT channels on PI substrate. Individual SWCNTs and SnO
2
NWs field effect transistors showed p‐ and n‐type transfer properties with current on/off ratios of 7.0 × 10
5
and 2.7 × 10
6
, respectively. The heterojunction diode showed a rectifying behavior with a rectification ratio of higher than 10
3
at ±1 V and the analysis with an equivalent circuit model of serially connected diode and resistor estimated an ideality factor of 1.5 and the resistance of 20 MΩ. The rectification of AC input signal was clearly demonstrated by fabricating a full‐wave bridge circuit of heterojunctions. In addition, the heterojunctions showed a high UV photosensitivity of ∼10
4
under reverse bias, suggesting their implicit applications in UV sensors.</abstract><doi>10.1002/adfm.201101470</doi><tpages>7</tpages></addata></record> |
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| ispartof | Advanced functional materials, 2011-11, Vol.21 (21), p.4159-4165 |
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| language | eng |
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| source | Wiley Online Library All Journals |
| title | Facile Fabrication of SWCNT/SnO 2 Nanowire Heterojunction Devices on Flexible Polyimide Substrate |
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