CO 2 ‐Laser‐Induced Growth of Epitaxial Graphene on 6H‐SiC(0001)

The thermal decomposition of SiC surface provides, perhaps, the most promising method for the epitaxial growth of graphene on a material useful in the electronics platform. Currently, efforts are focused on a reliable method for the growth of large‐area, low‐strain epitaxial graphene that is still l...

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Veröffentlicht in:	Advanced functional materials 2012-01, Vol.22 (1), p.113-120
Hauptverfasser:	Yannopoulos, Spyros N., Siokou, Angeliki, Nasikas, Nektarios K., Dracopoulos, Vassilios, Ravani, Fotini, Papatheodorou, George N.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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