An Organic Hole Transport Layer Enhances the Performance of Colloidal PbSe Quantum Dot Photovoltaic Devices
A thin poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transport layer enhances the AM1.5 power conversion efficiency of a PbSe quantum dot (QD)–containing photovoltaic device to 2.4%, from 1.5% for a standard PbSe QD device, a relative increase of 60%. Synchrotron X‐ray re...
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| Veröffentlicht in: | Advanced functional materials 2010-10, Vol.20 (20), p.3555-3560 |
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| creator | Kuo, Chih-Yin Su, Ming-Shin Hsu, Yu-Chien Lin, Hui-Ni Wei, Kung-Hwa |
| description | A thin poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transport layer enhances the AM1.5 power conversion efficiency of a PbSe quantum dot (QD)–containing photovoltaic device to 2.4%, from 1.5% for a standard PbSe QD device, a relative increase of 60%. Synchrotron X‐ray reflectivity measurements reveal that the roughness of the interfaces between the various layers decreases dramatically in the presence of the PEDOT:PSS layer. In addition, the device life time under continuous simulated AM1.5 irradiation (100 mW cm−2), measured in terms of the time required to reach 80% of the normalized efficiency, for the PbSe QD device incorporating the PEDOT:PSS hole transport layer is six times longer than that of the standard PbSe QD device.
A photovoltaic device incorporating a PEDOT:PSS hole transport layer and PbSe QDs exhibits a solar power conversion efficiency of 2.4%, substantially enhanced (by 60%) relative to that of a standard PbSe QD device. The corresponding solar device life time, measured in terms of the time required to reach 80% of the normalized efficiency, is improved six‐fold. |
| doi_str_mv | 10.1002/adfm.201001047 |
| format | Article |
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A photovoltaic device incorporating a PEDOT:PSS hole transport layer and PbSe QDs exhibits a solar power conversion efficiency of 2.4%, substantially enhanced (by 60%) relative to that of a standard PbSe QD device. The corresponding solar device life time, measured in terms of the time required to reach 80% of the normalized efficiency, is improved six‐fold.</description><identifier>ISSN: 1616-301X</identifier><identifier>EISSN: 1616-3028</identifier><identifier>DOI: 10.1002/adfm.201001047</identifier><language>eng</language><publisher>New York: WILEY-VCH Verlag</publisher><subject>hole transport layers ; PEDOT:PSS ; photovoltaic devices ; quantum dots ; X-ray reflectivity</subject><ispartof>Advanced functional materials, 2010-10, Vol.20 (20), p.3555-3560</ispartof><rights>Copyright © 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3277-e4bb83eb4c5c8ed72c777deb555f9e46a790f83f8480bb00ea13848238ca145d3</citedby><cites>FETCH-LOGICAL-c3277-e4bb83eb4c5c8ed72c777deb555f9e46a790f83f8480bb00ea13848238ca145d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadfm.201001047$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadfm.201001047$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Kuo, Chih-Yin</creatorcontrib><creatorcontrib>Su, Ming-Shin</creatorcontrib><creatorcontrib>Hsu, Yu-Chien</creatorcontrib><creatorcontrib>Lin, Hui-Ni</creatorcontrib><creatorcontrib>Wei, Kung-Hwa</creatorcontrib><title>An Organic Hole Transport Layer Enhances the Performance of Colloidal PbSe Quantum Dot Photovoltaic Devices</title><title>Advanced functional materials</title><addtitle>Adv. Funct. Mater</addtitle><description>A thin poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transport layer enhances the AM1.5 power conversion efficiency of a PbSe quantum dot (QD)–containing photovoltaic device to 2.4%, from 1.5% for a standard PbSe QD device, a relative increase of 60%. Synchrotron X‐ray reflectivity measurements reveal that the roughness of the interfaces between the various layers decreases dramatically in the presence of the PEDOT:PSS layer. In addition, the device life time under continuous simulated AM1.5 irradiation (100 mW cm−2), measured in terms of the time required to reach 80% of the normalized efficiency, for the PbSe QD device incorporating the PEDOT:PSS hole transport layer is six times longer than that of the standard PbSe QD device.
A photovoltaic device incorporating a PEDOT:PSS hole transport layer and PbSe QDs exhibits a solar power conversion efficiency of 2.4%, substantially enhanced (by 60%) relative to that of a standard PbSe QD device. The corresponding solar device life time, measured in terms of the time required to reach 80% of the normalized efficiency, is improved six‐fold.</description><subject>hole transport layers</subject><subject>PEDOT:PSS</subject><subject>photovoltaic devices</subject><subject>quantum dots</subject><subject>X-ray reflectivity</subject><issn>1616-301X</issn><issn>1616-3028</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkM9PwjAYhhujiYhePfcfGLbrto4j4deMCCNi9NZ03VeZbCtpB8p_7wiGePP0PfnyPu_hReiekh4lxH-Qua56PmmZkoBfoA6NaOQx4seXZ6bv1-jGuc82wzkLOmgzqPHCfsi6UDgxJeCVlbXbGtvgmTyAxeN6LWsFDjdrwClYbWx1fGCj8dCUpSlyWeI0ewG83Mm62VV4ZBqcrk1j9qZsZFs8gn3RVtyiKy1LB3e_t4teJ-PVMPFmi-njcDDzFPM59yDIsphBFqhQxZBzX3HOc8jCMNR9CCLJ-0THTMdBTLKMEJCUteyzWEkahDnrot6pV1njnAUttraopD0ISsRxKnGcSpynaoX-SfgqSjj8kxaD0eT5r-ud3MI18H12pd2IiDMeirf5VEThE0_S5VwQ9gPvl31V</recordid><startdate>20101022</startdate><enddate>20101022</enddate><creator>Kuo, Chih-Yin</creator><creator>Su, Ming-Shin</creator><creator>Hsu, Yu-Chien</creator><creator>Lin, Hui-Ni</creator><creator>Wei, Kung-Hwa</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20101022</creationdate><title>An Organic Hole Transport Layer Enhances the Performance of Colloidal PbSe Quantum Dot Photovoltaic Devices</title><author>Kuo, Chih-Yin ; Su, Ming-Shin ; Hsu, Yu-Chien ; Lin, Hui-Ni ; Wei, Kung-Hwa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3277-e4bb83eb4c5c8ed72c777deb555f9e46a790f83f8480bb00ea13848238ca145d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>hole transport layers</topic><topic>PEDOT:PSS</topic><topic>photovoltaic devices</topic><topic>quantum dots</topic><topic>X-ray reflectivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuo, Chih-Yin</creatorcontrib><creatorcontrib>Su, Ming-Shin</creatorcontrib><creatorcontrib>Hsu, Yu-Chien</creatorcontrib><creatorcontrib>Lin, Hui-Ni</creatorcontrib><creatorcontrib>Wei, Kung-Hwa</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>Advanced functional materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kuo, Chih-Yin</au><au>Su, Ming-Shin</au><au>Hsu, Yu-Chien</au><au>Lin, Hui-Ni</au><au>Wei, Kung-Hwa</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An Organic Hole Transport Layer Enhances the Performance of Colloidal PbSe Quantum Dot Photovoltaic Devices</atitle><jtitle>Advanced functional materials</jtitle><addtitle>Adv. Funct. Mater</addtitle><date>2010-10-22</date><risdate>2010</risdate><volume>20</volume><issue>20</issue><spage>3555</spage><epage>3560</epage><pages>3555-3560</pages><issn>1616-301X</issn><eissn>1616-3028</eissn><abstract>A thin poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transport layer enhances the AM1.5 power conversion efficiency of a PbSe quantum dot (QD)–containing photovoltaic device to 2.4%, from 1.5% for a standard PbSe QD device, a relative increase of 60%. Synchrotron X‐ray reflectivity measurements reveal that the roughness of the interfaces between the various layers decreases dramatically in the presence of the PEDOT:PSS layer. In addition, the device life time under continuous simulated AM1.5 irradiation (100 mW cm−2), measured in terms of the time required to reach 80% of the normalized efficiency, for the PbSe QD device incorporating the PEDOT:PSS hole transport layer is six times longer than that of the standard PbSe QD device.
A photovoltaic device incorporating a PEDOT:PSS hole transport layer and PbSe QDs exhibits a solar power conversion efficiency of 2.4%, substantially enhanced (by 60%) relative to that of a standard PbSe QD device. The corresponding solar device life time, measured in terms of the time required to reach 80% of the normalized efficiency, is improved six‐fold.</abstract><cop>New York</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/adfm.201001047</doi><tpages>6</tpages></addata></record> |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | hole transport layers PEDOT:PSS photovoltaic devices quantum dots X-ray reflectivity |
| title | An Organic Hole Transport Layer Enhances the Performance of Colloidal PbSe Quantum Dot Photovoltaic Devices |
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