Efficiency of GaInAs/GaAs quantum-well lasers upon inhomogeneous excitation of quantum wells

A model for calculating the power characteristics of laser structures taking into account inhomogeneous excitation of quantum wells (QWs), recombination in the barrier regions, and nonlinear gain effects is developed. It is shown that, with increasing number of QWs, the output power of the structure...

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Veröffentlicht in:	Quantum electronics (Woodbury, N.Y.) N.Y.), 2013-01, Vol.43 (11), p.999-1002, Article 999
Hauptverfasser:	Ushakov, D.V., Afonenko, A.A., Aleshkin, V.Ya
Format:	Artikel
Sprache:	eng
Schlagworte:	CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Computational efficiency EFFICIENCY EXCITATION GaInAs/GaAs laser Gallium arsenide GALLIUM ARSENIDES INDIUM ARSENIDES inhomogeneous excitation Injection current LASERS lasing efficiency NONLINEAR PROBLEMS Optimization quantum well QUANTUM WELLS
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