Fermi level controlled point defect balance in ion irradiated indium oxide

Fermi level controlled point defect balance is demonstrated in ion irradiated indium oxide ( In 2 O 3). Specifically, our observations can be sub-divided into the formation of isolated Frenkel pairs and secondary defects, correlated with an increase and decrease in resistance, respectively. Importantly, by considering the net charge contribution from the most energetically stable Frenkel pair configurations, we explain the data trends for low doses and determine an upper limit for the Fermi level pinning. Moreover, by comparing the corresponding number of generated carriers with the ballistic defect generation rates, we estimate the dynamic annealing efficiency. Further irradiation toward higher doses is consistent with the buildup of secondary defects. As such, the present data may be of practical use in a variety of In 2 O 3 device applications requiring predictions of its radiation tolerance. In a broader perspective, the present methodology may be valuable for benchmarking defect simulation data in semiconductors in general.