Alkali Metal Re-Distribution after Oxidation of 4H-SiC
Relocation of alkali metals sodium, potassium and cesium during oxidation of 4H-SiC has been studied by secondary ion mass spectrometry. The alkali metal source has been introduced by ion implantation before oxidation into n-and p-type 4H-SiC samples. Dry oxidation of SiC has been performed at 1150...
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| Veröffentlicht in: | 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ICSCRM 2015, 2016, Vol.858, p.677-680 |
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| container_title | 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 |
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| creator | Linnarsson, Margareta K. Vines, Lasse Suvanam, Sethu Saveda Hallén, Anders |
| description | Relocation of alkali metals sodium, potassium and cesium during oxidation of 4H-SiC has been studied by secondary ion mass spectrometry. The alkali metal source has been introduced by ion implantation before oxidation into n-and p-type 4H-SiC samples. Dry oxidation of SiC has been performed at 1150 oC during 4, 8 and 16 h. In the formed oxide, the main part of the alkali metals diffuses out via the SiO2 surface. Close to the moving SiO2/SiC interface, a minor amount of alkali metals is retained. In the SiC material, the main amount of implanted alkali atoms is not redistributed during the oxidation, although a minor amount diffuses deeper into the samples. For p-type 4H-SiC, the diffusion deeper into the samples of the studied alkali metals decreases as the mass increases, Na+ |
| doi_str_mv | 10.4028/www.scientific.net/MSF.858.677 |
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The alkali metal source has been introduced by ion implantation before oxidation into n-and p-type 4H-SiC samples. Dry oxidation of SiC has been performed at 1150 oC during 4, 8 and 16 h. In the formed oxide, the main part of the alkali metals diffuses out via the SiO2 surface. Close to the moving SiO2/SiC interface, a minor amount of alkali metals is retained. In the SiC material, the main amount of implanted alkali atoms is not redistributed during the oxidation, although a minor amount diffuses deeper into the samples. For p-type 4H-SiC, the diffusion deeper into the samples of the studied alkali metals decreases as the mass increases, Na+<K+<Cs+, but the sodium mobility is substantial already at 1150 °C.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>ISBN: 3035710422</identifier><identifier>ISBN: 9783035710427</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.858.677</identifier><language>eng</language><publisher>Pfaffikon: Trans Tech Publications Ltd</publisher><subject>Alkali atoms ; Alkali metals ; Cesium ; Diffusion ; Dry oxidation ; Drying ; Ion implantation ; Mass increase ; Mass spectrometry ; Metals ; Oxidation ; Oxides ; P-type 4H-SiC ; Potassium ; Re-distribution ; Secondary ion mass spectrometry ; SiC materials ; Silicon carbide ; Silicon dioxide ; Silicon oxides ; SIMS ; Sodium</subject><ispartof>16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, 2016, Vol.858, p.677-680</ispartof><rights>2016 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. May 2016</rights><rights>info:eu-repo/semantics/openAccess</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/3999?width=600</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/1792602627?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>230,310,311,315,781,785,886,4025,4051,4052,21394,21395,23261,26572,27928,27929,27930,33535,33536,33708,33709,34319,34320,43664,43792,44072</link.rule.ids><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-195473$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Linnarsson, Margareta K.</creatorcontrib><creatorcontrib>Vines, Lasse</creatorcontrib><creatorcontrib>Suvanam, Sethu Saveda</creatorcontrib><creatorcontrib>Hallén, Anders</creatorcontrib><title>Alkali Metal Re-Distribution after Oxidation of 4H-SiC</title><title>16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015</title><description>Relocation of alkali metals sodium, potassium and cesium during oxidation of 4H-SiC has been studied by secondary ion mass spectrometry. The alkali metal source has been introduced by ion implantation before oxidation into n-and p-type 4H-SiC samples. Dry oxidation of SiC has been performed at 1150 oC during 4, 8 and 16 h. In the formed oxide, the main part of the alkali metals diffuses out via the SiO2 surface. Close to the moving SiO2/SiC interface, a minor amount of alkali metals is retained. In the SiC material, the main amount of implanted alkali atoms is not redistributed during the oxidation, although a minor amount diffuses deeper into the samples. For p-type 4H-SiC, the diffusion deeper into the samples of the studied alkali metals decreases as the mass increases, Na+<K+<Cs+, but the sodium mobility is substantial already at 1150 °C.</description><subject>Alkali atoms</subject><subject>Alkali metals</subject><subject>Cesium</subject><subject>Diffusion</subject><subject>Dry oxidation</subject><subject>Drying</subject><subject>Ion implantation</subject><subject>Mass increase</subject><subject>Mass spectrometry</subject><subject>Metals</subject><subject>Oxidation</subject><subject>Oxides</subject><subject>P-type 4H-SiC</subject><subject>Potassium</subject><subject>Re-distribution</subject><subject>Secondary ion mass spectrometry</subject><subject>SiC materials</subject><subject>Silicon carbide</subject><subject>Silicon dioxide</subject><subject>Silicon oxides</subject><subject>SIMS</subject><subject>Sodium</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><isbn>3035710422</isbn><isbn>9783035710427</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>3HK</sourceid><recordid>eNqNkV1rFDEUhoNWcFv9DQ4I4s1Mc_I1mRtx2VortBSsenvIzCY27XSyTTKs_ntTV23plVch8PCe856HkDdAG0GZPtxut00avJ2yd35oJpsPzy6OGy11o9r2CVmAUqzuWsmekn1OuWyBCsb2yIIyKWspWvWc7Kd0RSkHDWpB1HK8NqOvzmw2Y_XZ1kc-5ej7OfswVcZlG6vzH35tfv-Dq8RJfeFXL8gzZ8ZkX_55D8jX4w9fVif16fnHT6vlaT1wBW1t184CZ8INat11QjvQQgjopXHUDU6zTnCwIJ3tZGeN5mpdFlZC8J71g-D8gNS73LS1m7nHTfQ3Jv7EYDwe-W9LDPE7XudLhK6Uu-Nf7fghlh5-wilEg0C1ZCh528lCvN0RmxhuZ5sy3vg02HE0kw1zQtDlUgDAoaCvH6FXYY5T6YvQdkxRplhbqHd_R4aUonX_lgSKd9awWMN7a1isYbGGxRoWayXg_S4gRzOlbIfLB3P-L-IX3yKi5Q</recordid><startdate>2016</startdate><enddate>2016</enddate><creator>Linnarsson, Margareta K.</creator><creator>Vines, Lasse</creator><creator>Suvanam, Sethu Saveda</creator><creator>Hallén, Anders</creator><general>Trans Tech Publications Ltd</general><general>Trans Tech Publications Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7SR</scope><scope>7XB</scope><scope>88I</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>M2P</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope><scope>3HK</scope><scope>ADTPV</scope><scope>BNKNJ</scope><scope>D8V</scope></search><sort><creationdate>2016</creationdate><title>Alkali Metal Re-Distribution after Oxidation of 4H-SiC</title><author>Linnarsson, Margareta K. ; 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The alkali metal source has been introduced by ion implantation before oxidation into n-and p-type 4H-SiC samples. Dry oxidation of SiC has been performed at 1150 oC during 4, 8 and 16 h. In the formed oxide, the main part of the alkali metals diffuses out via the SiO2 surface. Close to the moving SiO2/SiC interface, a minor amount of alkali metals is retained. In the SiC material, the main amount of implanted alkali atoms is not redistributed during the oxidation, although a minor amount diffuses deeper into the samples. For p-type 4H-SiC, the diffusion deeper into the samples of the studied alkali metals decreases as the mass increases, Na+<K+<Cs+, but the sodium mobility is substantial already at 1150 °C.</abstract><cop>Pfaffikon</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.858.677</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Alkali atoms Alkali metals Cesium Diffusion Dry oxidation Drying Ion implantation Mass increase Mass spectrometry Metals Oxidation Oxides P-type 4H-SiC Potassium Re-distribution Secondary ion mass spectrometry SiC materials Silicon carbide Silicon dioxide Silicon oxides SIMS Sodium |
| title | Alkali Metal Re-Distribution after Oxidation of 4H-SiC |
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