Identifying chemical and physical changes in wide-gap semiconductors using real-time and near ambient-pressure XPS

Photoelectron spectroscopy is a powerful characterisation tool for semiconductor surfaces and interfaces, providing in principle a correlation between the electronic band structure and surface chemistry along with quantitative parameters such as the electron affinity, interface potential, band bendi...

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Veröffentlicht in:	Faraday discussions 2022-08, Vol.236, p.191-24
Hauptverfasser:	Astley, Simon, Hu, Di, Hazeldine, Kerry, Ash, Johnathan, Cross, Rachel E, Cooil, Simon, Allen, Martin W, Evans, James, James, Kelvin, Venturini, Federica, Grinter, David C, Ferrer, Pilar, Arrigo, Rosa, Held, Georg, Williams, Gruffudd T, Evans, D. Andrew
Format:	Artikel
Sprache:	eng
Schlagworte:	Binding energy Chemical effects Diamonds Electron affinity Energy bands Energy value Gallium oxides Gold base alloys Interfaces Low conductivity Measurement methods Monitoring Parameter identification Photoelectrons Pressure measurement Radiation Radiation damage Real time Room temperature Semiconductors Synchrotron radiation Synchrotrons Thermal expansion Ultrahigh vacuum X ray photoelectron spectroscopy
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