Self-compliance multilevel storage characteristic in HfO2-based device

In this paper, the self-compliance bipolar resistive switching characteristic of an HfO2-based memory device with Ag/HfO2/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	中国物理B：英文版 2016-10 (10), p.259-261
1. Verfasser:	高晓平 傅丽萍 陈传兵 袁鹏 李颖弢
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!