High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator(GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer, respectively, during the GOI fabrication. Abrupt doping prof...

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Veröffentlicht in:	光子学研究：英文版 2017 (6), p.221-228
1. Verfasser:	YIDING LIN KWANG HONG LEE SHUYU BAO XIN GUO HONG WANG JURGEN MICHEL CHUAN SENG TAN
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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