Ultrafast interlayer photocarrier transfer in graphene–MoSe2 van der Waals heterostructure

Ultrafast interlayer photocarrier transfer in graphene–MoSe2 van der Waals heterostructure

We report the fabrication and photocarrier dynamics in graphene–MoSe2 heterostructures. The samples were fabricated by mechanical exfoliation and manual stacking techniques. Ultrafast laser measurements were performed on the heterostructure and MoSe2 monolayer samples. By comparing the results, we c...

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Veröffentlicht in:中国物理B：英文版 2017-09, Vol.26 (9), p.401-405
1. Verfasser: 张心悟 何大伟 何佳琪 赵思淇 郝生财 王永生 衣立新
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Sprache:eng
Schlagworte:
光吸收系数
光生载流子
光电子器件
子动力学
异质结构
石墨
范德瓦尔斯
载流子传输层
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container_title 中国物理B：英文版
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creator 张心悟 何大伟 何佳琪 赵思淇 郝生财 王永生 衣立新
description We report the fabrication and photocarrier dynamics in graphene–MoSe2 heterostructures. The samples were fabricated by mechanical exfoliation and manual stacking techniques. Ultrafast laser measurements were performed on the heterostructure and MoSe2 monolayer samples. By comparing the results, we conclude that photocarriers injected in MoSe2 of the heterostructure transfer to graphene on an ultrafast time scale. The carriers in graphene alter the optical absorption coefficient of MoSe2. These results illustrate the potential applications of this material in optoelectronic devices.
doi_str_mv 10.1088/1674-1056/26/9/097202
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fullrecord <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_673030871</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>673030871</cqvip_id><sourcerecordid>673030871</sourcerecordid><originalsourceid>FETCH-LOGICAL-c112t-6624e1ec3ab4eda24ae4a5a6098346f5aca8eda6712f2ab002bb93d48d5e9ccb3</originalsourceid><addsrcrecordid>eNo9TstKw0AUHUTBWv0EIbiPufPIZLKUolaouNDiRig3k5uH1EmcTIXu_Af_0C9xQHF1nhwOY-ccLjkYk3FdqJRDrjOhszKDshAgDthMQG5SaaQ6ZLP_zjE7maZXAM1ByBl7WW-DxwankPQukN_innwydkMYLHrfRxFzNzWR9C5pPY4dOfr-_LofHkkkH-iSOmbPiNsp6ShODFPwOxt2nk7ZURNtOvvDOVvfXD8tlunq4fZucbVKLecipFoLRZysxEpRjUIhKcxRQxm_6yZHiyb6uuCiEVgBiKoqZa1MnVNpbSXn7OJ313aDa997125G37-h3290IUGCKbj8AX4LWOA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Ultrafast interlayer photocarrier transfer in graphene–MoSe2 van der Waals heterostructure</title><source>IOP Publishing Journals</source><creator>张心悟 何大伟 何佳琪 赵思淇 郝生财 王永生 衣立新</creator><creatorcontrib>张心悟 何大伟 何佳琪 赵思淇 郝生财 王永生 衣立新</creatorcontrib><description>We report the fabrication and photocarrier dynamics in graphene–MoSe2 heterostructures. The samples were fabricated by mechanical exfoliation and manual stacking techniques. Ultrafast laser measurements were performed on the heterostructure and MoSe2 monolayer samples. By comparing the results, we conclude that photocarriers injected in MoSe2 of the heterostructure transfer to graphene on an ultrafast time scale. The carriers in graphene alter the optical absorption coefficient of MoSe2. These results illustrate the potential applications of this material in optoelectronic devices.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>DOI: 10.1088/1674-1056/26/9/097202</identifier><language>eng</language><subject>光吸收系数 ; 光生载流子 ; 光电子器件 ; 子动力学 ; 异质结构 ; 石墨 ; 范德瓦尔斯 ; 载流子传输层</subject><ispartof>中国物理B：英文版, 2017-09, Vol.26 (9), p.401-405</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>张心悟 何大伟 何佳琪 赵思淇 郝生财 王永生 衣立新</creatorcontrib><title>Ultrafast interlayer photocarrier transfer in graphene–MoSe2 van der Waals heterostructure</title><title>中国物理B：英文版</title><addtitle>Chinese Physics</addtitle><description>We report the fabrication and photocarrier dynamics in graphene–MoSe2 heterostructures. The samples were fabricated by mechanical exfoliation and manual stacking techniques. Ultrafast laser measurements were performed on the heterostructure and MoSe2 monolayer samples. By comparing the results, we conclude that photocarriers injected in MoSe2 of the heterostructure transfer to graphene on an ultrafast time scale. The carriers in graphene alter the optical absorption coefficient of MoSe2. These results illustrate the potential applications of this material in optoelectronic devices.</description><subject>光吸收系数</subject><subject>光生载流子</subject><subject>光电子器件</subject><subject>子动力学</subject><subject>异质结构</subject><subject>石墨</subject><subject>范德瓦尔斯</subject><subject>载流子传输层</subject><issn>1674-1056</issn><issn>2058-3834</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo9TstKw0AUHUTBWv0EIbiPufPIZLKUolaouNDiRig3k5uH1EmcTIXu_Af_0C9xQHF1nhwOY-ccLjkYk3FdqJRDrjOhszKDshAgDthMQG5SaaQ6ZLP_zjE7maZXAM1ByBl7WW-DxwankPQukN_innwydkMYLHrfRxFzNzWR9C5pPY4dOfr-_LofHkkkH-iSOmbPiNsp6ShODFPwOxt2nk7ZURNtOvvDOVvfXD8tlunq4fZucbVKLecipFoLRZysxEpRjUIhKcxRQxm_6yZHiyb6uuCiEVgBiKoqZa1MnVNpbSXn7OJ313aDa997125G37-h3290IUGCKbj8AX4LWOA</recordid><startdate>20170901</startdate><enddate>20170901</enddate><creator>张心悟 何大伟 何佳琪 赵思淇 郝生财 王永生 衣立新</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>20170901</creationdate><title>Ultrafast interlayer photocarrier transfer in graphene–MoSe2 van der Waals heterostructure</title><author>张心悟 何大伟 何佳琪 赵思淇 郝生财 王永生 衣立新</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c112t-6624e1ec3ab4eda24ae4a5a6098346f5aca8eda6712f2ab002bb93d48d5e9ccb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>光吸收系数</topic><topic>光生载流子</topic><topic>光电子器件</topic><topic>子动力学</topic><topic>异质结构</topic><topic>石墨</topic><topic>范德瓦尔斯</topic><topic>载流子传输层</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>张心悟 何大伟 何佳琪 赵思淇 郝生财 王永生 衣立新</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国物理B：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>张心悟 何大伟 何佳琪 赵思淇 郝生财 王永生 衣立新</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultrafast interlayer photocarrier transfer in graphene–MoSe2 van der Waals heterostructure</atitle><jtitle>中国物理B：英文版</jtitle><addtitle>Chinese Physics</addtitle><date>2017-09-01</date><risdate>2017</risdate><volume>26</volume><issue>9</issue><spage>401</spage><epage>405</epage><pages>401-405</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><abstract>We report the fabrication and photocarrier dynamics in graphene–MoSe2 heterostructures. The samples were fabricated by mechanical exfoliation and manual stacking techniques. Ultrafast laser measurements were performed on the heterostructure and MoSe2 monolayer samples. By comparing the results, we conclude that photocarriers injected in MoSe2 of the heterostructure transfer to graphene on an ultrafast time scale. The carriers in graphene alter the optical absorption coefficient of MoSe2. These results illustrate the potential applications of this material in optoelectronic devices.</abstract><doi>10.1088/1674-1056/26/9/097202</doi><tpages>5</tpages></addata></record>
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subjects 光吸收系数
光生载流子
光电子器件
子动力学
异质结构
石墨
范德瓦尔斯
载流子传输层
title Ultrafast interlayer photocarrier transfer in graphene–MoSe2 van der Waals heterostructure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T14%3A48%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ultrafast%20interlayer%20photocarrier%20transfer%20in%20graphene%E2%80%93MoSe2%20van%20der%20Waals%20heterostructure&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86B%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E5%BC%A0%E5%BF%83%E6%82%9F%20%E4%BD%95%E5%A4%A7%E4%BC%9F%20%E4%BD%95%E4%BD%B3%E7%90%AA%20%E8%B5%B5%E6%80%9D%E6%B7%87%20%E9%83%9D%E7%94%9F%E8%B4%A2%20%E7%8E%8B%E6%B0%B8%E7%94%9F%20%E8%A1%A3%E7%AB%8B%E6%96%B0&rft.date=2017-09-01&rft.volume=26&rft.issue=9&rft.spage=401&rft.epage=405&rft.pages=401-405&rft.issn=1674-1056&rft.eissn=2058-3834&rft_id=info:doi/10.1088/1674-1056/26/9/097202&rft_dat=%3Cchongqing%3E673030871%3C/chongqing%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=673030871&rfr_iscdi=true