Electrical Transport Properties of Type-Ⅷ Sn-Based Single-Crystalline Clathrates (Eu/Ba)8Ga16Sn30 Prepared by Ga Flux Method

Single-crystalline samples of Eu/Ba-filled Sn-based type-Ⅷ clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu doping. Results indicate that Eu atoms tend to replace Ba atoms. With the increase of t...

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Veröffentlicht in:中国物理快报:英文版 2017, Vol.34 (4), p.92-96
1. Verfasser: 邓书平 程峰 李德聪 唐语 陈钟 申兰先 刘虹霞 杨培志 邓书康
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description Single-crystalline samples of Eu/Ba-filled Sn-based type-Ⅷ clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu doping. Results indicate that Eu atoms tend to replace Ba atoms. With the increase of the Eu initial content, the carrier density increases and the carrier mobility decreases, which leads to an increase of the Seebeck coefficient. By contrast, the electrical conductivity decreases. Finally, the sample with Eu initial content of x = 0.75 behaves with excellent electrical properties, which shows a maximal power factor of 1.51 mW·m^-1K^-2 at 480K, and the highest ZT achieved is 0.87 near the temperature of 483K.
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fullrecord <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_671959099</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>671959099</cqvip_id><sourcerecordid>671959099</sourcerecordid><originalsourceid>FETCH-chongqing_primary_6719590993</originalsourceid><addsrcrecordid>eNqNjTFOwzAUhi0EEqFwhyd2C5s0SbM2SsuCVCkZ2KrX9LUxMraxXYmsSEhwEi7R03CBXoEMHIDpW_7v_85YIoup5Gk2FecsEfdZzlNRPF2yqxCehZByJmXC3mtNXfSqQw2tRxOc9RFW3jryUVEAu4N2cMR_Pr6hMXyOgbbQKLPXxCs_hIhaK0NQaYy9xzgqp-Nnfbib4-n4NVuizBuTivGSHPrR3QywRFjowxs8Uuzt9ppd7FAHuvnjhN0u6rZ64F1vzf51TK2dVy_oh3VeyDIrRVmm_xr9Al8hU1I</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electrical Transport Properties of Type-Ⅷ Sn-Based Single-Crystalline Clathrates (Eu/Ba)8Ga16Sn30 Prepared by Ga Flux Method</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><source>Alma/SFX Local Collection</source><creator>邓书平 程峰 李德聪 唐语 陈钟 申兰先 刘虹霞 杨培志 邓书康</creator><creatorcontrib>邓书平 程峰 李德聪 唐语 陈钟 申兰先 刘虹霞 杨培志 邓书康</creatorcontrib><description>Single-crystalline samples of Eu/Ba-filled Sn-based type-Ⅷ clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu doping. Results indicate that Eu atoms tend to replace Ba atoms. With the increase of the Eu initial content, the carrier density increases and the carrier mobility decreases, which leads to an increase of the Seebeck coefficient. By contrast, the electrical conductivity decreases. Finally, the sample with Eu initial content of x = 0.75 behaves with excellent electrical properties, which shows a maximal power factor of 1.51 mW·m^-1K^-2 at 480K, and the highest ZT achieved is 0.87 near the temperature of 483K.</description><identifier>ISSN: 0256-307X</identifier><identifier>EISSN: 1741-3540</identifier><language>eng</language><ispartof>中国物理快报:英文版, 2017, Vol.34 (4), p.92-96</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/84212X/84212X.jpg</thumbnail><link.rule.ids>314,776,780,4010</link.rule.ids></links><search><creatorcontrib>邓书平 程峰 李德聪 唐语 陈钟 申兰先 刘虹霞 杨培志 邓书康</creatorcontrib><title>Electrical Transport Properties of Type-Ⅷ Sn-Based Single-Crystalline Clathrates (Eu/Ba)8Ga16Sn30 Prepared by Ga Flux Method</title><title>中国物理快报:英文版</title><addtitle>Chinese Physics Letters</addtitle><description>Single-crystalline samples of Eu/Ba-filled Sn-based type-Ⅷ clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu doping. Results indicate that Eu atoms tend to replace Ba atoms. With the increase of the Eu initial content, the carrier density increases and the carrier mobility decreases, which leads to an increase of the Seebeck coefficient. By contrast, the electrical conductivity decreases. Finally, the sample with Eu initial content of x = 0.75 behaves with excellent electrical properties, which shows a maximal power factor of 1.51 mW·m^-1K^-2 at 480K, and the highest ZT achieved is 0.87 near the temperature of 483K.</description><issn>0256-307X</issn><issn>1741-3540</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqNjTFOwzAUhi0EEqFwhyd2C5s0SbM2SsuCVCkZ2KrX9LUxMraxXYmsSEhwEi7R03CBXoEMHIDpW_7v_85YIoup5Gk2FecsEfdZzlNRPF2yqxCehZByJmXC3mtNXfSqQw2tRxOc9RFW3jryUVEAu4N2cMR_Pr6hMXyOgbbQKLPXxCs_hIhaK0NQaYy9xzgqp-Nnfbib4-n4NVuizBuTivGSHPrR3QywRFjowxs8Uuzt9ppd7FAHuvnjhN0u6rZ64F1vzf51TK2dVy_oh3VeyDIrRVmm_xr9Al8hU1I</recordid><startdate>2017</startdate><enddate>2017</enddate><creator>邓书平 程峰 李德聪 唐语 陈钟 申兰先 刘虹霞 杨培志 邓书康</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>2017</creationdate><title>Electrical Transport Properties of Type-Ⅷ Sn-Based Single-Crystalline Clathrates (Eu/Ba)8Ga16Sn30 Prepared by Ga Flux Method</title><author>邓书平 程峰 李德聪 唐语 陈钟 申兰先 刘虹霞 杨培志 邓书康</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_6719590993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>邓书平 程峰 李德聪 唐语 陈钟 申兰先 刘虹霞 杨培志 邓书康</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国物理快报:英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>邓书平 程峰 李德聪 唐语 陈钟 申兰先 刘虹霞 杨培志 邓书康</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical Transport Properties of Type-Ⅷ Sn-Based Single-Crystalline Clathrates (Eu/Ba)8Ga16Sn30 Prepared by Ga Flux Method</atitle><jtitle>中国物理快报:英文版</jtitle><addtitle>Chinese Physics Letters</addtitle><date>2017</date><risdate>2017</risdate><volume>34</volume><issue>4</issue><spage>92</spage><epage>96</epage><pages>92-96</pages><issn>0256-307X</issn><eissn>1741-3540</eissn><abstract>Single-crystalline samples of Eu/Ba-filled Sn-based type-Ⅷ clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu doping. Results indicate that Eu atoms tend to replace Ba atoms. With the increase of the Eu initial content, the carrier density increases and the carrier mobility decreases, which leads to an increase of the Seebeck coefficient. By contrast, the electrical conductivity decreases. Finally, the sample with Eu initial content of x = 0.75 behaves with excellent electrical properties, which shows a maximal power factor of 1.51 mW·m^-1K^-2 at 480K, and the highest ZT achieved is 0.87 near the temperature of 483K.</abstract></addata></record>
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title Electrical Transport Properties of Type-Ⅷ Sn-Based Single-Crystalline Clathrates (Eu/Ba)8Ga16Sn30 Prepared by Ga Flux Method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T21%3A19%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20Transport%20Properties%20of%20Type-%E2%85%A7%20Sn-Based%20Single-Crystalline%20Clathrates%20%EF%BC%88Eu/Ba%EF%BC%898Ga16Sn30%20Prepared%20by%20Ga%20Flux%20Method&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86%E5%BF%AB%E6%8A%A5%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E9%82%93%E4%B9%A6%E5%B9%B3%20%E7%A8%8B%E5%B3%B0%20%E6%9D%8E%E5%BE%B7%E8%81%AA%20%E5%94%90%E8%AF%AD%20%E9%99%88%E9%92%9F%20%E7%94%B3%E5%85%B0%E5%85%88%20%E5%88%98%E8%99%B9%E9%9C%9E%20%E6%9D%A8%E5%9F%B9%E5%BF%97%20%E9%82%93%E4%B9%A6%E5%BA%B7&rft.date=2017&rft.volume=34&rft.issue=4&rft.spage=92&rft.epage=96&rft.pages=92-96&rft.issn=0256-307X&rft.eissn=1741-3540&rft_id=info:doi/&rft_dat=%3Cchongqing%3E671959099%3C/chongqing%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=671959099&rfr_iscdi=true