Pressure-Induced Metallization and Electrical Phase Diagram for Polycrystalline CaB6 under High Pressure and Low Temperature

Pressure-Induced Metallization and Electrical Phase Diagram for Polycrystalline CaB6 under High Pressure and Low Temperature

The electrical properties of polycrystaltine CaB6 are revealed by in-situ resistance measurements under high pressure and low temperature. Due to the existence of grain boundaries, polycrystalline CaB6 behaves with semiconducting transport properties, which is different from the semimetallic CaB6 si...

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Veröffentlicht in:中国物理快报：英文版 2016-08 (8), p.88-90
1. Verfasser: 杨洁 焦阳 韩永昊 李晶
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Sprache:eng
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Low
半金属
多晶
电学性能
电阻测量
相位图
输运性质
高压力
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description The electrical properties of polycrystaltine CaB6 are revealed by in-situ resistance measurements under high pressure and low temperature. Due to the existence of grain boundaries, polycrystalline CaB6 behaves with semiconducting transport properties, which is different from the semimetallic CaB6 single crystals. The temperaturedependent resistance measurement results show that before the structural phase transition at 12.3 GPa the high pressure first induces the metallization at 6.5 GPa for CAB6. Moreover, the phase diagram for CaB6 is drawn based on the investigated electric conducting properties and at least three different conducting phases are found even at moderate high pressure and low temperature, indicating that the electric nature of CaB6 is very sensitive to the environment.
doi_str_mv 10.1088/0256-307X/33/8/086201
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fullrecord <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_669760631</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>669760631</cqvip_id><sourcerecordid>669760631</sourcerecordid><originalsourceid>FETCH-LOGICAL-c182t-2cfeeed5c86b0f699dedd3915721339de1bbf2a309027a87fdaf05fbfefc0fa23</originalsourceid><addsrcrecordid>eNo9jM1KAzEYRYMoWKuPIAT3Y_PTyWSWWltbqNhFBXflm-TLNDLN1GSKVHx4S_1ZXc7l3kPINWe3nGk9YCJXmWTF60DKwQG1EoyfkB4vhjyT-ZCdkt7_5pxcpPTGGOea8x75WkRMaRcxmwW7M2jpE3bQNP4TOt8GCsHScYOmi95AQxdrSEgfPNQRNtS1kS7aZm_iPh1PAekI7hXdBYuRTn29pn_-o2neftAlbrYYoTt0l-TMQZPw6jf75GUyXo6m2fz5cTa6m2eGa9FlwjhEtLnRqmJOlaVFa2XJ80JwKQ_Eq8oJkKxkogBdOAuO5a5y6AxzIGSf3Px4zboN9bsP9Wob_QbifqVUWSimJJffioZjUQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Pressure-Induced Metallization and Electrical Phase Diagram for Polycrystalline CaB6 under High Pressure and Low Temperature</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><source>Alma/SFX Local Collection</source><creator>杨洁 焦阳 韩永昊 李晶</creator><creatorcontrib>杨洁 焦阳 韩永昊 李晶</creatorcontrib><description>The electrical properties of polycrystaltine CaB6 are revealed by in-situ resistance measurements under high pressure and low temperature. Due to the existence of grain boundaries, polycrystalline CaB6 behaves with semiconducting transport properties, which is different from the semimetallic CaB6 single crystals. The temperaturedependent resistance measurement results show that before the structural phase transition at 12.3 GPa the high pressure first induces the metallization at 6.5 GPa for CAB6. Moreover, the phase diagram for CaB6 is drawn based on the investigated electric conducting properties and at least three different conducting phases are found even at moderate high pressure and low temperature, indicating that the electric nature of CaB6 is very sensitive to the environment.</description><identifier>ISSN: 0256-307X</identifier><identifier>EISSN: 1741-3540</identifier><identifier>DOI: 10.1088/0256-307X/33/8/086201</identifier><language>eng</language><subject>Low ; 半金属 ; 多晶 ; 电学性能 ; 电阻测量 ; 相位图 ; 输运性质 ; 高压力</subject><ispartof>中国物理快报：英文版, 2016-08 (8), p.88-90</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/84212X/84212X.jpg</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>杨洁 焦阳 韩永昊 李晶</creatorcontrib><title>Pressure-Induced Metallization and Electrical Phase Diagram for Polycrystalline CaB6 under High Pressure and Low Temperature</title><title>中国物理快报：英文版</title><addtitle>Chinese Physics Letters</addtitle><description>The electrical properties of polycrystaltine CaB6 are revealed by in-situ resistance measurements under high pressure and low temperature. Due to the existence of grain boundaries, polycrystalline CaB6 behaves with semiconducting transport properties, which is different from the semimetallic CaB6 single crystals. The temperaturedependent resistance measurement results show that before the structural phase transition at 12.3 GPa the high pressure first induces the metallization at 6.5 GPa for CAB6. Moreover, the phase diagram for CaB6 is drawn based on the investigated electric conducting properties and at least three different conducting phases are found even at moderate high pressure and low temperature, indicating that the electric nature of CaB6 is very sensitive to the environment.</description><subject>Low</subject><subject>半金属</subject><subject>多晶</subject><subject>电学性能</subject><subject>电阻测量</subject><subject>相位图</subject><subject>输运性质</subject><subject>高压力</subject><issn>0256-307X</issn><issn>1741-3540</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNo9jM1KAzEYRYMoWKuPIAT3Y_PTyWSWWltbqNhFBXflm-TLNDLN1GSKVHx4S_1ZXc7l3kPINWe3nGk9YCJXmWTF60DKwQG1EoyfkB4vhjyT-ZCdkt7_5pxcpPTGGOea8x75WkRMaRcxmwW7M2jpE3bQNP4TOt8GCsHScYOmi95AQxdrSEgfPNQRNtS1kS7aZm_iPh1PAekI7hXdBYuRTn29pn_-o2neftAlbrYYoTt0l-TMQZPw6jf75GUyXo6m2fz5cTa6m2eGa9FlwjhEtLnRqmJOlaVFa2XJ80JwKQ_Eq8oJkKxkogBdOAuO5a5y6AxzIGSf3Px4zboN9bsP9Wob_QbifqVUWSimJJffioZjUQ</recordid><startdate>20160801</startdate><enddate>20160801</enddate><creator>杨洁 焦阳 韩永昊 李晶</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>20160801</creationdate><title>Pressure-Induced Metallization and Electrical Phase Diagram for Polycrystalline CaB6 under High Pressure and Low Temperature</title><author>杨洁 焦阳 韩永昊 李晶</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c182t-2cfeeed5c86b0f699dedd3915721339de1bbf2a309027a87fdaf05fbfefc0fa23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Low</topic><topic>半金属</topic><topic>多晶</topic><topic>电学性能</topic><topic>电阻测量</topic><topic>相位图</topic><topic>输运性质</topic><topic>高压力</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>杨洁 焦阳 韩永昊 李晶</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国物理快报：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>杨洁 焦阳 韩永昊 李晶</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pressure-Induced Metallization and Electrical Phase Diagram for Polycrystalline CaB6 under High Pressure and Low Temperature</atitle><jtitle>中国物理快报：英文版</jtitle><addtitle>Chinese Physics Letters</addtitle><date>2016-08-01</date><risdate>2016</risdate><issue>8</issue><spage>88</spage><epage>90</epage><pages>88-90</pages><issn>0256-307X</issn><eissn>1741-3540</eissn><abstract>The electrical properties of polycrystaltine CaB6 are revealed by in-situ resistance measurements under high pressure and low temperature. Due to the existence of grain boundaries, polycrystalline CaB6 behaves with semiconducting transport properties, which is different from the semimetallic CaB6 single crystals. The temperaturedependent resistance measurement results show that before the structural phase transition at 12.3 GPa the high pressure first induces the metallization at 6.5 GPa for CAB6. Moreover, the phase diagram for CaB6 is drawn based on the investigated electric conducting properties and at least three different conducting phases are found even at moderate high pressure and low temperature, indicating that the electric nature of CaB6 is very sensitive to the environment.</abstract><doi>10.1088/0256-307X/33/8/086201</doi><tpages>3</tpages></addata></record>
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subjects Low
半金属
多晶
电学性能
电阻测量
相位图
输运性质
高压力
title Pressure-Induced Metallization and Electrical Phase Diagram for Polycrystalline CaB6 under High Pressure and Low Temperature
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-14T05%3A57%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Pressure-Induced%20Metallization%20and%20Electrical%20Phase%20Diagram%20for%20Polycrystalline%20CaB6%20under%20High%20Pressure%20and%20Low%20Temperature&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86%E5%BF%AB%E6%8A%A5%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E6%9D%A8%E6%B4%81%20%E7%84%A6%E9%98%B3%20%E9%9F%A9%E6%B0%B8%E6%98%8A%20%E6%9D%8E%E6%99%B6&rft.date=2016-08-01&rft.issue=8&rft.spage=88&rft.epage=90&rft.pages=88-90&rft.issn=0256-307X&rft.eissn=1741-3540&rft_id=info:doi/10.1088/0256-307X/33/8/086201&rft_dat=%3Cchongqing%3E669760631%3C/chongqing%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=669760631&rfr_iscdi=true