Influence of GalnP ordering on the performance of GalnP solar cells
CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing g...
Gespeichert in:
| Veröffentlicht in: | 半导体学报：英文版 2016 (7), p.31-34 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 34 |
|---|---|
| container_issue | 7 |
| container_start_page | 31 |
| container_title | 半导体学报：英文版 |
| container_volume | |
| creator | 于淑珍 董建荣 赵勇明 孙玉润 李奎龙 曾徐路 杨辉 |
| description | CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room- temperature and low-temperature photoluminescence （PL） spectra of A1GalnP/GaInP/A1GaInP double heterostruc- tures （DHs） reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance. |
| format | Article |
| fullrecord | <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_669662584</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>669662584</cqvip_id><sourcerecordid>669662584</sourcerecordid><originalsourceid>FETCH-chongqing_primary_6696625843</originalsourceid><addsrcrecordid>eNpjYeA0NDM30TWxNDLjYOAqLs4yMADyTQw5GZw989JySlPzklMV8tMU3BNz8gIU8otSUosy89IV8vMUSjJSFQpSi9Lyi3ITURQV5-ckFikkp-bkFPMwsKYl5hSn8kJpbgYlN9cQZw_d5Iz8vPRCoEnxBUWZuYlFlfFmZpZmZkamFibGRCkCAMUkOEo</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Influence of GalnP ordering on the performance of GalnP solar cells</title><source>IOP Publishing Journals</source><source>Alma/SFX Local Collection</source><creator>于淑珍 董建荣 赵勇明 孙玉润 李奎龙 曾徐路 杨辉</creator><creatorcontrib>于淑珍 董建荣 赵勇明 孙玉润 李奎龙 曾徐路 杨辉</creatorcontrib><description>CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room- temperature and low-temperature photoluminescence （PL） spectra of A1GalnP/GaInP/A1GaInP double heterostruc- tures （DHs） reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance.</description><identifier>ISSN: 1674-4926</identifier><language>eng</language><subject>GaInP ; 低温光致发光 ; 太阳能电池 ; 少数载流子寿命 ; 常温 ; 生长条件 ; 电池性能 ; 金属有机化学气相沉积</subject><ispartof>半导体学报：英文版, 2016 (7), p.31-34</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,777,781,4010</link.rule.ids></links><search><creatorcontrib>于淑珍 董建荣 赵勇明 孙玉润 李奎龙 曾徐路 杨辉</creatorcontrib><title>Influence of GalnP ordering on the performance of GalnP solar cells</title><title>半导体学报：英文版</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room- temperature and low-temperature photoluminescence （PL） spectra of A1GalnP/GaInP/A1GaInP double heterostruc- tures （DHs） reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance.</description><subject>GaInP</subject><subject>低温光致发光</subject><subject>太阳能电池</subject><subject>少数载流子寿命</subject><subject>常温</subject><subject>生长条件</subject><subject>电池性能</subject><subject>金属有机化学气相沉积</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNpjYeA0NDM30TWxNDLjYOAqLs4yMADyTQw5GZw989JySlPzklMV8tMU3BNz8gIU8otSUosy89IV8vMUSjJSFQpSi9Lyi3ITURQV5-ckFikkp-bkFPMwsKYl5hSn8kJpbgYlN9cQZw_d5Iz8vPRCoEnxBUWZuYlFlfFmZpZmZkamFibGRCkCAMUkOEo</recordid><startdate>2016</startdate><enddate>2016</enddate><creator>于淑珍 董建荣 赵勇明 孙玉润 李奎龙 曾徐路 杨辉</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>2016</creationdate><title>Influence of GalnP ordering on the performance of GalnP solar cells</title><author>于淑珍 董建荣 赵勇明 孙玉润 李奎龙 曾徐路 杨辉</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_6696625843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>GaInP</topic><topic>低温光致发光</topic><topic>太阳能电池</topic><topic>少数载流子寿命</topic><topic>常温</topic><topic>生长条件</topic><topic>电池性能</topic><topic>金属有机化学气相沉积</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>于淑珍 董建荣 赵勇明 孙玉润 李奎龙 曾徐路 杨辉</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>半导体学报：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>于淑珍 董建荣 赵勇明 孙玉润 李奎龙 曾徐路 杨辉</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of GalnP ordering on the performance of GalnP solar cells</atitle><jtitle>半导体学报：英文版</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2016</date><risdate>2016</risdate><issue>7</issue><spage>31</spage><epage>34</epage><pages>31-34</pages><issn>1674-4926</issn><abstract>CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room- temperature and low-temperature photoluminescence （PL） spectra of A1GalnP/GaInP/A1GaInP double heterostruc- tures （DHs） reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance.</abstract></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1674-4926 |
| ispartof | 半导体学报：英文版, 2016 (7), p.31-34 |
| issn | 1674-4926 |
| language | eng |
| recordid | cdi_chongqing_primary_669662584 |
| source | IOP Publishing Journals; Alma/SFX Local Collection |
| subjects | GaInP 低温光致发光 太阳能电池 少数载流子寿命 常温 生长条件 电池性能 金属有机化学气相沉积 |
| title | Influence of GalnP ordering on the performance of GalnP solar cells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T03%3A28%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20GalnP%20ordering%20on%20the%20performance%20of%20GalnP%20solar%20cells&rft.jtitle=%E5%8D%8A%E5%AF%BC%E4%BD%93%E5%AD%A6%E6%8A%A5%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E4%BA%8E%E6%B7%91%E7%8F%8D%20%E8%91%A3%E5%BB%BA%E8%8D%A3%20%E8%B5%B5%E5%8B%87%E6%98%8E%20%E5%AD%99%E7%8E%89%E6%B6%A6%20%E6%9D%8E%E5%A5%8E%E9%BE%99%20%E6%9B%BE%E5%BE%90%E8%B7%AF%20%E6%9D%A8%E8%BE%89&rft.date=2016&rft.issue=7&rft.spage=31&rft.epage=34&rft.pages=31-34&rft.issn=1674-4926&rft_id=info:doi/&rft_dat=%3Cchongqing%3E669662584%3C/chongqing%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=669662584&rfr_iscdi=true |