In-plane anisotropy in two-dimensional electron gas at LaAlO_3/SrTiO_3（110） interface

In-plane anisotropy in two-dimensional electron gas at LaAlO_3/SrTiO_3（110） interface

A systematic study of the two-dimensional electron gas at La AlO_3/SrTiO_3（110） interface reveals an anisotropy along two specific directions, [001] and 1ī0. The anisotropy becomes distinct for the interface prepared under high oxygen pressure with low carrier density. Angular dependence of magnetor...

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Veröffentlicht in:中国物理B：英文版 2016 (7), p.361-366
1. Verfasser: 沈胜春 洪彦鹏 厉承剑 薛红霞 王欣欣 聂家财
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Sprache:eng
Schlagworte:
二维电子气
可调电阻
平面各向异性
接口
界面显示
自旋轨道耦合
超导转变温度
载流子密度
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description A systematic study of the two-dimensional electron gas at La AlO_3/SrTiO_3（110） interface reveals an anisotropy along two specific directions, [001] and 1ī0. The anisotropy becomes distinct for the interface prepared under high oxygen pressure with low carrier density. Angular dependence of magnetoresistance shows that the electron confinement is stronger along the 1ī0 direction. Gate-tunable magnetoresistance reveals a clear in-plane anisotropy of the spin–orbit coupling,and the spin relaxation mechanism along both directions belongs to D＇yakonov–Perel＇（DP） scenario. Moreover, in-plane anisotropic superconductivity is observed for the sample with high carrier density, the superconducting transition temperature is lower but the upper critical field is higher along the 1ī0 direction. This in-plane anisotropy could be ascribed to the anisotropic band structure along the two crystallographic directions.
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subjects 二维电子气
可调电阻
平面各向异性
接口
界面显示
自旋轨道耦合
超导转变温度
载流子密度
title In-plane anisotropy in two-dimensional electron gas at LaAlO_3/SrTiO_3（110） interface
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