Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO_3 thin films
We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current-voltage（I-V） curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures（〈 253...
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| Veröffentlicht in: | 中国物理B：英文版 2015 (10), p.510-517 |
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| creator | 芦增星 宋骁 赵丽娜 李忠文 林远彬 曾敏 张璋 陆旭兵 吴素娟 高兴森 严志波 刘俊明 |
| description | We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current-voltage（I-V） curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures（〈 253 K）, the I-V curve shows an open circuit voltage（OCV）, which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures（〉 253 K）, the I-V behaviors are governed by both space-charge-limited conduction（SCLC） and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of〉 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects. |
| format | Article |
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The room temperature current-voltage（I-V） curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures（〈 253 K）, the I-V curve shows an open circuit voltage（OCV）, which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures（〉 253 K）, the I-V behaviors are governed by both space-charge-limited conduction（SCLC） and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of〉 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><language>eng</language><subject>BiFeO3薄膜 ; I-V特性 ; 开关行为 ; 温度范围 ; 电流-电压 ; 电阻 ; 空间电荷限制电流 ; 铁电薄膜</subject><ispartof>中国物理B：英文版, 2015 (10), p.510-517</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>芦增星 宋骁 赵丽娜 李忠文 林远彬 曾敏 张璋 陆旭兵 吴素娟 高兴森 严志波 刘俊明</creatorcontrib><title>Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO_3 thin films</title><title>中国物理B：英文版</title><addtitle>Chinese Physics</addtitle><description>We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current-voltage（I-V） curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures（〈 253 K）, the I-V curve shows an open circuit voltage（OCV）, which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures（〉 253 K）, the I-V behaviors are governed by both space-charge-limited conduction（SCLC） and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of〉 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.</description><subject>BiFeO3薄膜</subject><subject>I-V特性</subject><subject>开关行为</subject><subject>温度范围</subject><subject>电流-电压</subject><subject>电阻</subject><subject>空间电荷限制电流</subject><subject>铁电薄膜</subject><issn>1674-1056</issn><issn>2058-3834</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqNjEFugzAQAK2qkUrb_GHVO5LB4HBuVZRbL7kjxyywkTF07ZLw-1CpD-hpLjPzIJJcllWqKlU8iiTThyLNZKmfxHMIFyl1JnOVCHfCcUY28YcRWpzRt-gtBpg66JB5Qoc2MlmKKxjfAmOgEGlBCFeKdiDfwxkHs9DEvxHOFM2NjIN3qvGrURA3BzpyY3gVu864gPs_voi3-vP0cUztMPn-e1s1M9NoeG201jIvC52rf0l3vZxKog</recordid><startdate>2015</startdate><enddate>2015</enddate><creator>芦增星 宋骁 赵丽娜 李忠文 林远彬 曾敏 张璋 陆旭兵 吴素娟 高兴森 严志波 刘俊明</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>2015</creationdate><title>Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO_3 thin films</title><author>芦增星 宋骁 赵丽娜 李忠文 林远彬 曾敏 张璋 陆旭兵 吴素娟 高兴森 严志波 刘俊明</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_6660254623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BiFeO3薄膜</topic><topic>I-V特性</topic><topic>开关行为</topic><topic>温度范围</topic><topic>电流-电压</topic><topic>电阻</topic><topic>空间电荷限制电流</topic><topic>铁电薄膜</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>芦增星 宋骁 赵丽娜 李忠文 林远彬 曾敏 张璋 陆旭兵 吴素娟 高兴森 严志波 刘俊明</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国物理B：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>芦增星 宋骁 赵丽娜 李忠文 林远彬 曾敏 张璋 陆旭兵 吴素娟 高兴森 严志波 刘俊明</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO_3 thin films</atitle><jtitle>中国物理B：英文版</jtitle><addtitle>Chinese Physics</addtitle><date>2015</date><risdate>2015</risdate><issue>10</issue><spage>510</spage><epage>517</epage><pages>510-517</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><abstract>We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current-voltage（I-V） curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures（〈 253 K）, the I-V curve shows an open circuit voltage（OCV）, which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures（〉 253 K）, the I-V behaviors are governed by both space-charge-limited conduction（SCLC） and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of〉 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.</abstract></addata></record> |
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| source | Institute of Physics Journals |
| subjects | BiFeO3薄膜 I-V特性 开关行为 温度范围 电流-电压 电阻 空间电荷限制电流 铁电薄膜 |
| title | Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO_3 thin films |
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