Frequency stability of lnP HBT over 0.2 to 220 GHz
The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excelle...
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Veröffentlicht in: | 半导体学报:英文版 2015 (2), p.77-81 |
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creator | 周之蒋 任坤 刘军 程伟 陆海燕 孙玲玲 |
description | The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device. |
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A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device.</description><identifier>ISSN: 1674-4926</identifier><language>eng</language><subject>GHz ; HBT ; 偏置条件 ; 小信号模型 ; 拓扑模型 ; 模型参数提取 ; 频率稳定度 ; 频率稳定性</subject><ispartof>半导体学报:英文版, 2015 (2), p.77-81</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,778,782,4012</link.rule.ids></links><search><creatorcontrib>周之蒋 任坤 刘军 程伟 陆海燕 孙玲玲</creatorcontrib><title>Frequency stability of lnP HBT over 0.2 to 220 GHz</title><title>半导体学报:英文版</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device.</description><subject>GHz</subject><subject>HBT</subject><subject>偏置条件</subject><subject>小信号模型</subject><subject>拓扑模型</subject><subject>模型参数提取</subject><subject>频率稳定度</subject><subject>频率稳定性</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpjYeA0NDM30TWxNDLjYOAqLs4yMADyTQw5GYzcilILS1PzkisViksSkzJzMksqFfLTFHLyAhQ8nEIU8stSixQM9IwUSvIVjIwMFNw9qngYWNMSc4pTeaE0N4OSm2uIs4duckZ-XnphZl56fEFRZm5iUWW8mZmJgZmlpYGlMVGKABpvMB4</recordid><startdate>2015</startdate><enddate>2015</enddate><creator>周之蒋 任坤 刘军 程伟 陆海燕 孙玲玲</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>2015</creationdate><title>Frequency stability of lnP HBT over 0.2 to 220 GHz</title><author>周之蒋 任坤 刘军 程伟 陆海燕 孙玲玲</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_6640699093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>GHz</topic><topic>HBT</topic><topic>偏置条件</topic><topic>小信号模型</topic><topic>拓扑模型</topic><topic>模型参数提取</topic><topic>频率稳定度</topic><topic>频率稳定性</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>周之蒋 任坤 刘军 程伟 陆海燕 孙玲玲</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>半导体学报:英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>周之蒋 任坤 刘军 程伟 陆海燕 孙玲玲</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Frequency stability of lnP HBT over 0.2 to 220 GHz</atitle><jtitle>半导体学报:英文版</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2015</date><risdate>2015</risdate><issue>2</issue><spage>77</spage><epage>81</epage><pages>77-81</pages><issn>1674-4926</issn><abstract>The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device.</abstract></addata></record> |
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source | IOP Publishing Journals; Alma/SFX Local Collection |
subjects | GHz HBT 偏置条件 小信号模型 拓扑模型 模型参数提取 频率稳定度 频率稳定性 |
title | Frequency stability of lnP HBT over 0.2 to 220 GHz |
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