Slurry components of TiO2 thin film in chemical mechanical polishing
A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CME The effects of silica sols concentration, slurry pH, chelating agent and active agent concentration on s...
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| Veröffentlicht in: | 半导体学报：英文版 2014-10 (10), p.190-194 |
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| container_title | 半导体学报：英文版 |
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| creator | 段波 周建伟 刘玉岭 王辰伟 张玉峰 |
| description | A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CME The effects of silica sols concentration, slurry pH, chelating agent and active agent concentration on surface roughness and material removal rate were investigated. Our experimental results indicated that we got lower surface roughness （1.26 A, the scanned area was 10 × 10 μm2） and higher polishing rate （65.6 nm/min）, the optimal parameters were： silica sols concentration 8.0%, pH value 9.0, active agent concentration 50 mL/L, chelating agent concentration 10 mL/L, respectively. |
| doi_str_mv | 10.1088/1674-4926/35/10/106003 |
| format | Article |
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Our experimental results indicated that we got lower surface roughness （1.26 A, the scanned area was 10 × 10 μm2） and higher polishing rate （65.6 nm/min）, the optimal parameters were： silica sols concentration 8.0%, pH value 9.0, active agent concentration 50 mL/L, chelating agent concentration 10 mL/L, respectively.</description><identifier>ISSN: 1674-4926</identifier><identifier>DOI: 10.1088/1674-4926/35/10/106003</identifier><language>eng</language><subject>二氧化硅溶胶 ; 化学机械抛光 ; 去除速率 ; 工艺条件 ; 材料去除率 ; 浆料成分 ; 纳米TiO2薄膜 ; 表面粗糙度</subject><ispartof>半导体学报：英文版, 2014-10 (10), p.190-194</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>段波 周建伟 刘玉岭 王辰伟 张玉峰</creatorcontrib><title>Slurry components of TiO2 thin film in chemical mechanical polishing</title><title>半导体学报：英文版</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. 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Our experimental results indicated that we got lower surface roughness （1.26 A, the scanned area was 10 × 10 μm2） and higher polishing rate （65.6 nm/min）, the optimal parameters were： silica sols concentration 8.0%, pH value 9.0, active agent concentration 50 mL/L, chelating agent concentration 10 mL/L, respectively.</description><subject>二氧化硅溶胶</subject><subject>化学机械抛光</subject><subject>去除速率</subject><subject>工艺条件</subject><subject>材料去除率</subject><subject>浆料成分</subject><subject>纳米TiO2薄膜</subject><subject>表面粗糙度</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9TUtLAzEYzEHBWv0LEryv-yVfHrtHqY8KhR6s5xLTL91I9uHueui_N6gIAzPDDDOM3Qi4E1BVpTBWFaqWpkRdCsgwAHjGFv_BBbucpg-A7JVYsIfX9DWOJ-77dug76uaJ94Hv4lbyuYkdDzG1PLNvqI3eJd6Sb1z3I4c-xSmXjlfsPLg00fUfL9nb0-NutS422-eX1f2m8FLiXFh0NZrgDKKRutYKPVkLVlnhDxAEWuneFVUVgSFVayR5UM4ppb0WRBKX7PZ31zd9d_zMz_thjK0bT3tjpBVSIOA3schKbg</recordid><startdate>20141001</startdate><enddate>20141001</enddate><creator>段波 周建伟 刘玉岭 王辰伟 张玉峰</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>20141001</creationdate><title>Slurry components of TiO2 thin film in chemical mechanical polishing</title><author>段波 周建伟 刘玉岭 王辰伟 张玉峰</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c223t-73a936fa6336259543ce7707471cd0f1372ab4e88e06e4953e2d4aa445c51ee23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>二氧化硅溶胶</topic><topic>化学机械抛光</topic><topic>去除速率</topic><topic>工艺条件</topic><topic>材料去除率</topic><topic>浆料成分</topic><topic>纳米TiO2薄膜</topic><topic>表面粗糙度</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>段波 周建伟 刘玉岭 王辰伟 张玉峰</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>半导体学报：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>段波 周建伟 刘玉岭 王辰伟 张玉峰</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Slurry components of TiO2 thin film in chemical mechanical polishing</atitle><jtitle>半导体学报：英文版</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2014-10-01</date><risdate>2014</risdate><issue>10</issue><spage>190</spage><epage>194</epage><pages>190-194</pages><issn>1674-4926</issn><abstract>A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. 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| fulltext | fulltext |
| identifier | ISSN: 1674-4926 |
| ispartof | 半导体学报：英文版, 2014-10 (10), p.190-194 |
| issn | 1674-4926 |
| language | eng |
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| source | IOP Publishing Journals; Alma/SFX Local Collection |
| subjects | 二氧化硅溶胶 化学机械抛光 去除速率 工艺条件 材料去除率 浆料成分 纳米TiO2薄膜 表面粗糙度 |
| title | Slurry components of TiO2 thin film in chemical mechanical polishing |
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