TixSb2Te Thin Films for Phase Change Memory Applications
Sb2 Te films with different Ti contents （TixSb2 Te） are derived via the target-attachment method by using the magnetron sputtering technique. The effects of the Ti content on the phase change characteristics and the microstructures are investigated by x-ray diffraction, x-ray photoelectron spectrosc...
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| Veröffentlicht in: | 中国物理快报：英文版 2014-07 (7), p.222-225 |
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| container_title | 中国物理快报：英文版 |
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| creator | 唐时宇 李润 欧欣 许含霓 夏奕东 殷江 刘治国 |
| description | Sb2 Te films with different Ti contents （TixSb2 Te） are derived via the target-attachment method by using the magnetron sputtering technique. The effects of the Ti content on the phase change characteristics and the microstructures are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atom force microcopy. Resistance-temperature measurements are carried out to reveal the enhanced crystallization temperature of TixSb2 Te films, indicating a better thermal stability in such films. Both the activation energy and the temperature for 10 y data retention increase with increasing the concentration of Ti. It indicates that the crystallization of the amorphous Sb2 Te film could be suppressed by the introduction of Ti. The improvement of crystallization temperature and the thermal stability of the amorphous Sb2 Te film results from the introduction of Ti in Sb- Te bond that decreases the binding energy of Sb 4d and Te 4d. |
| doi_str_mv | 10.1088/0256-307X/31/7/078503 |
| format | Article |
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The effects of the Ti content on the phase change characteristics and the microstructures are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atom force microcopy. Resistance-temperature measurements are carried out to reveal the enhanced crystallization temperature of TixSb2 Te films, indicating a better thermal stability in such films. Both the activation energy and the temperature for 10 y data retention increase with increasing the concentration of Ti. It indicates that the crystallization of the amorphous Sb2 Te film could be suppressed by the introduction of Ti. The improvement of crystallization temperature and the thermal stability of the amorphous Sb2 Te film results from the introduction of Ti in Sb- Te bond that decreases the binding energy of Sb 4d and Te 4d.</description><identifier>ISSN: 0256-307X</identifier><identifier>EISSN: 1741-3540</identifier><identifier>DOI: 10.1088/0256-307X/31/7/078503</identifier><language>eng</language><subject>X射线光电子能谱法 ; 原子力显微术 ; 应用 ; 扫描电子显微镜 ; 晶化温度 ; 相变存储器 ; 磁控溅射技术 ; 薄膜</subject><ispartof>中国物理快报：英文版, 2014-07 (7), p.222-225</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/84212X/84212X.jpg</thumbnail><link.rule.ids>314,776,780,27902,27903</link.rule.ids></links><search><creatorcontrib>唐时宇 李润 欧欣 许含霓 夏奕东 殷江 刘治国</creatorcontrib><title>TixSb2Te Thin Films for Phase Change Memory Applications</title><title>中国物理快报：英文版</title><addtitle>Chinese Physics Letters</addtitle><description>Sb2 Te films with different Ti contents （TixSb2 Te） are derived via the target-attachment method by using the magnetron sputtering technique. The effects of the Ti content on the phase change characteristics and the microstructures are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atom force microcopy. Resistance-temperature measurements are carried out to reveal the enhanced crystallization temperature of TixSb2 Te films, indicating a better thermal stability in such films. Both the activation energy and the temperature for 10 y data retention increase with increasing the concentration of Ti. It indicates that the crystallization of the amorphous Sb2 Te film could be suppressed by the introduction of Ti. The improvement of crystallization temperature and the thermal stability of the amorphous Sb2 Te film results from the introduction of Ti in Sb- Te bond that decreases the binding energy of Sb 4d and Te 4d.</description><subject>X射线光电子能谱法</subject><subject>原子力显微术</subject><subject>应用</subject><subject>扫描电子显微镜</subject><subject>晶化温度</subject><subject>相变存储器</subject><subject>磁控溅射技术</subject><subject>薄膜</subject><issn>0256-307X</issn><issn>1741-3540</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9jMFKxDAUAIMoWFc_QQjea_OSJnk5LsVVYUXBCt6WNE3aSLetzR7cv1dQhIG5DEPINbBbYIgF41Llgun3QkChC6ZRMnFCMtAl5EKW7JRk_805uUjpgzEABMgI1vHrteG1p3UfR7qJwz7RMC30pbfJ06q3Y-fpk99Py5Gu53mIzh7iNKZLchbskPzVn1fkbXNXVw_59vn-sVpvcwfID7lsW6aN984ppSS2qIJHZ6Tn6J1skQcnGy-DbcoSVMOV-QHQSi1Kb9ogVuTm9-v6aew-49jt5iXu7XLcKQXKSJRGfAN45kiB</recordid><startdate>20140701</startdate><enddate>20140701</enddate><creator>唐时宇 李润 欧欣 许含霓 夏奕东 殷江 刘治国</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>20140701</creationdate><title>TixSb2Te Thin Films for Phase Change Memory Applications</title><author>唐时宇 李润 欧欣 许含霓 夏奕东 殷江 刘治国</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c182t-5dd079eecc66658d86fe8c95e28ec5d82fc5be5fab4416b26926918a5734e9df3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>X射线光电子能谱法</topic><topic>原子力显微术</topic><topic>应用</topic><topic>扫描电子显微镜</topic><topic>晶化温度</topic><topic>相变存储器</topic><topic>磁控溅射技术</topic><topic>薄膜</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>唐时宇 李润 欧欣 许含霓 夏奕东 殷江 刘治国</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国物理快报：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>唐时宇 李润 欧欣 许含霓 夏奕东 殷江 刘治国</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>TixSb2Te Thin Films for Phase Change Memory Applications</atitle><jtitle>中国物理快报：英文版</jtitle><addtitle>Chinese Physics Letters</addtitle><date>2014-07-01</date><risdate>2014</risdate><issue>7</issue><spage>222</spage><epage>225</epage><pages>222-225</pages><issn>0256-307X</issn><eissn>1741-3540</eissn><abstract>Sb2 Te films with different Ti contents （TixSb2 Te） are derived via the target-attachment method by using the magnetron sputtering technique. The effects of the Ti content on the phase change characteristics and the microstructures are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atom force microcopy. Resistance-temperature measurements are carried out to reveal the enhanced crystallization temperature of TixSb2 Te films, indicating a better thermal stability in such films. Both the activation energy and the temperature for 10 y data retention increase with increasing the concentration of Ti. It indicates that the crystallization of the amorphous Sb2 Te film could be suppressed by the introduction of Ti. The improvement of crystallization temperature and the thermal stability of the amorphous Sb2 Te film results from the introduction of Ti in Sb- Te bond that decreases the binding energy of Sb 4d and Te 4d.</abstract><doi>10.1088/0256-307X/31/7/078503</doi><tpages>4</tpages></addata></record> |
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| ispartof | 中国物理快报：英文版, 2014-07 (7), p.222-225 |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | X射线光电子能谱法 原子力显微术 应用 扫描电子显微镜 晶化温度 相变存储器 磁控溅射技术 薄膜 |
| title | TixSb2Te Thin Films for Phase Change Memory Applications |
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