Investigation on surface roughness in chemical mechanical polishing of TiO2 thin film
Abstract： Surface roughness by peaks and depressions on the surface of titanium dioxide （TiO2） thin film, which was widely used for an antireflection coating of optical systems, caused the extinction coefficient increase and affected the properties of optical system. Chemical mechanical polishing （C...
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| Veröffentlicht in: | 半导体学报：英文版 2014-06 (6), p.10-13 |
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| container_title | 半导体学报：英文版 |
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| creator | 段波 周建伟 刘玉岭 王辰伟 张玉峰 |
| description | Abstract： Surface roughness by peaks and depressions on the surface of titanium dioxide （TiO2） thin film, which was widely used for an antireflection coating of optical systems, caused the extinction coefficient increase and affected the properties of optical system. Chemical mechanical polishing （CMP） is a very important method for surface smoothing. In this polishing experiment, we used self-formulated weakly alkaline slurry. Other process parameters were working pressure, slurry flow rate, head speed, and platen speed. In order to get the best surface roughness （1.16 A, the scanned area was 10 × 10 μm2） and a higher polishing rate （60.8 nm/min）, the optimal parameters were： pressure, 1 psi; slurry flow rate, 250 mL/min; polishing head speed, 80 rpm; platen speed, 87 rpm. |
| doi_str_mv | 10.1088/1674-4926/35/6/063003 |
| format | Article |
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Chemical mechanical polishing （CMP） is a very important method for surface smoothing. In this polishing experiment, we used self-formulated weakly alkaline slurry. Other process parameters were working pressure, slurry flow rate, head speed, and platen speed. In order to get the best surface roughness （1.16 A, the scanned area was 10 × 10 μm2） and a higher polishing rate （60.8 nm/min）, the optimal parameters were： pressure, 1 psi; slurry flow rate, 250 mL/min; polishing head speed, 80 rpm; platen speed, 87 rpm.</description><identifier>ISSN: 1674-4926</identifier><identifier>DOI: 10.1088/1674-4926/35/6/063003</identifier><language>eng</language><subject>TiO2薄膜 ; 二氧化钛 ; 光学系统 ; 化学机械抛光 ; 工作压力 ; 抗反射涂层 ; 消光系数 ; 表面粗糙度</subject><ispartof>半导体学报：英文版, 2014-06 (6), p.10-13</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>段波 周建伟 刘玉岭 王辰伟 张玉峰</creatorcontrib><title>Investigation on surface roughness in chemical mechanical polishing of TiO2 thin film</title><title>半导体学报：英文版</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>Abstract： Surface roughness by peaks and depressions on the surface of titanium dioxide （TiO2） thin film, which was widely used for an antireflection coating of optical systems, caused the extinction coefficient increase and affected the properties of optical system. Chemical mechanical polishing （CMP） is a very important method for surface smoothing. In this polishing experiment, we used self-formulated weakly alkaline slurry. Other process parameters were working pressure, slurry flow rate, head speed, and platen speed. In order to get the best surface roughness （1.16 A, the scanned area was 10 × 10 μm2） and a higher polishing rate （60.8 nm/min）, the optimal parameters were： pressure, 1 psi; slurry flow rate, 250 mL/min; polishing head speed, 80 rpm; platen speed, 87 rpm.</description><subject>TiO2薄膜</subject><subject>二氧化钛</subject><subject>光学系统</subject><subject>化学机械抛光</subject><subject>工作压力</subject><subject>抗反射涂层</subject><subject>消光系数</subject><subject>表面粗糙度</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9jstqwzAURLVooenjEwrqB7jW81peltBHIJBNsg6SfGWr2HJqOYX-fU1bCgMzZxbDEHLP2SNnxpQcKlWoWkApdQklA8mYvCCr__6KXOf8ztjCiq_IYZM-Mc-xtXMcE12Uz1OwHuk0ntsuYc40Juo7HKK3PR3Qdzb9xNPYx9zF1NIx0H3cCTovREPsh1tyGWyf8e7Pb8jh5Xm_fiu2u9fN-mlbeG74XMi6gkp650TQujFYKYfeWN8gB4AQdAPaVtxJgY7bpjYgmBMgEbWvlFbyhjz87vpuTO3H8uV4muJgp6-jqmvFDAf5DQHRUc8</recordid><startdate>20140601</startdate><enddate>20140601</enddate><creator>段波 周建伟 刘玉岭 王辰伟 张玉峰</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>20140601</creationdate><title>Investigation on surface roughness in chemical mechanical polishing of TiO2 thin film</title><author>段波 周建伟 刘玉岭 王辰伟 张玉峰</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c181t-397673cbb2f55d8e74bec8acde1666ff5d65a71b32eb1ad98620b263ee5c74543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>TiO2薄膜</topic><topic>二氧化钛</topic><topic>光学系统</topic><topic>化学机械抛光</topic><topic>工作压力</topic><topic>抗反射涂层</topic><topic>消光系数</topic><topic>表面粗糙度</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>段波 周建伟 刘玉岭 王辰伟 张玉峰</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>半导体学报：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>段波 周建伟 刘玉岭 王辰伟 张玉峰</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation on surface roughness in chemical mechanical polishing of TiO2 thin film</atitle><jtitle>半导体学报：英文版</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2014-06-01</date><risdate>2014</risdate><issue>6</issue><spage>10</spage><epage>13</epage><pages>10-13</pages><issn>1674-4926</issn><abstract>Abstract： Surface roughness by peaks and depressions on the surface of titanium dioxide （TiO2） thin film, which was widely used for an antireflection coating of optical systems, caused the extinction coefficient increase and affected the properties of optical system. Chemical mechanical polishing （CMP） is a very important method for surface smoothing. In this polishing experiment, we used self-formulated weakly alkaline slurry. Other process parameters were working pressure, slurry flow rate, head speed, and platen speed. In order to get the best surface roughness （1.16 A, the scanned area was 10 × 10 μm2） and a higher polishing rate （60.8 nm/min）, the optimal parameters were： pressure, 1 psi; slurry flow rate, 250 mL/min; polishing head speed, 80 rpm; platen speed, 87 rpm.</abstract><doi>10.1088/1674-4926/35/6/063003</doi><tpages>4</tpages></addata></record> |
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| ispartof | 半导体学报：英文版, 2014-06 (6), p.10-13 |
| issn | 1674-4926 |
| language | eng |
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| source | Institute of Physics Journals; Alma/SFX Local Collection |
| subjects | TiO2薄膜 二氧化钛 光学系统 化学机械抛光 工作压力 抗反射涂层 消光系数 表面粗糙度 |
| title | Investigation on surface roughness in chemical mechanical polishing of TiO2 thin film |
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