Fabricating GeO2 passivation layer by N20 plasma oxidation for Ge NMOSFETs application

In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation i...

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Veröffentlicht in:	中国物理B：英文版 2014 (6), p.538-541
1. Verfasser:	林猛安霞黎明云全新李敏李志强刘朋强张兴黄如
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Sprache:	eng
Schlagworte:	MOS场效应管 N20 二氧化锗制造界面态密度离子氧化钝化层
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creator	林猛安霞黎明云全新李敏李志强刘朋强张兴黄如
description	In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.
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Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><language>eng</language><subject>MOS场效应管 ; N20 ; 二氧化锗 ; 制造 ; 界面态密度 ; 离子氧化 ; 钝化层</subject><ispartof>中国物理B：英文版, 2014 (6), p.538-541</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>林猛安霞黎明云全新李敏李志强刘朋强张兴黄如</creatorcontrib><title>Fabricating GeO2 passivation layer by N20 plasma oxidation for Ge NMOSFETs application</title><title>中国物理B：英文版</title><addtitle>Chinese Physics</addtitle><description>In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.</description><subject>MOS场效应管</subject><subject>N20</subject><subject>二氧化锗</subject><subject>制造</subject><subject>界面态密度</subject><subject>离子氧化</subject><subject>钝化层</subject><issn>1674-1056</issn><issn>2058-3834</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqNjUsKwjAYhIMoWB93-D1AIU3fa7G6sS4Ut-VvbWskbWIiYm9vUA_gamDmm5kRcRgNE9dP_GBMHC-KA9ejYTQlM2NulEYeZb5DzhmWmlf44H0L2_rAQKEx_GkN2YPAodZQDpAzCkqg6RDki1--aSO1rUC-PxyzzckAKiU-U7JfkEmDwtTLn87JyiLrnVtdZd_e7VmhNO9QD0WQJjQM0tj_h3kDVAA_8w</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>林猛安霞黎明云全新李敏李志强刘朋强张兴黄如</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>2014</creationdate><title>Fabricating GeO2 passivation layer by N20 plasma oxidation for Ge NMOSFETs application</title><author>林猛安霞黎明云全新李敏李志强刘朋强张兴黄如</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_498054973</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>MOS场效应管</topic><topic>N20</topic><topic>二氧化锗</topic><topic>制造</topic><topic>界面态密度</topic><topic>离子氧化</topic><topic>钝化层</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>林猛安霞黎明云全新李敏李志强刘朋强张兴黄如</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国物理B：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>林猛安霞黎明云全新李敏李志强刘朋强张兴黄如</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabricating GeO2 passivation layer by N20 plasma oxidation for Ge NMOSFETs application</atitle><jtitle>中国物理B：英文版</jtitle><addtitle>Chinese Physics</addtitle><date>2014</date><risdate>2014</risdate><issue>6</issue><spage>538</spage><epage>541</epage><pages>538-541</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><abstract>In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.</abstract></addata></record>
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title	Fabricating GeO2 passivation layer by N20 plasma oxidation for Ge NMOSFETs application
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