A IO-MHz SOl-Based Face Shear Square Micromechanical Resonator
A 10-MHz face shear (FS) square micro- mechanical resonator based on silicon-on-insulator (SO1) technology is presented in this paper. In order to examine the improvement of quality factor as well as motional resistance Rx in this structure, the center-stem anchor is employed in this study. The bene...
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Veröffentlicht in: | 电子科技学刊:英文版 2014, Vol.12 (1), p.64-70 |
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creator | Tan-Loc Nguyen Jing-Fu Bao Jun-Wen Jiang Yuan Ling Xin-Yi Li |
description | A 10-MHz face shear (FS) square micro- mechanical resonator based on silicon-on-insulator (SO1) technology is presented in this paper. In order to examine the improvement of quality factor as well as motional resistance Rx in this structure, the center-stem anchor is employed in this study. The benefit of anchoring the square in the center, which is the nodal point, is that the energy losses through the anchor can be minimized. Hence, a quality factor value of 2.0 million and the motional resistance of 8.2 k~ can be obtained with an FS mode resonator via finite element (FE) simulation. The results show the significance of the FS mode in this design, not only in its structure but also in its square-extensional mode and Lame-mode. Additionally, an SOI-based fabrication process is proposed to support the design. |
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In order to examine the improvement of quality factor as well as motional resistance Rx in this structure, the center-stem anchor is employed in this study. The benefit of anchoring the square in the center, which is the nodal point, is that the energy losses through the anchor can be minimized. Hence, a quality factor value of 2.0 million and the motional resistance of 8.2 k~ can be obtained with an FS mode resonator via finite element (FE) simulation. The results show the significance of the FS mode in this design, not only in its structure but also in its square-extensional mode and Lame-mode. Additionally, an SOI-based fabrication process is proposed to support the design.</description><identifier>ISSN: 1674-862X</identifier><language>eng</language><subject>人脸 ; 伸展模式 ; 动态电阻 ; 品质因数 ; 微机械谐振器 ; 溶胶 ; 硅绝缘体 ; 能量损失</subject><ispartof>电子科技学刊:英文版, 2014, Vol.12 (1), p.64-70</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/87980A/87980A.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>Tan-Loc Nguyen Jing-Fu Bao Jun-Wen Jiang Yuan Ling Xin-Yi Li</creatorcontrib><title>A IO-MHz SOl-Based Face Shear Square Micromechanical Resonator</title><title>电子科技学刊:英文版</title><addtitle>Journal of Electronic Science Technology</addtitle><description>A 10-MHz face shear (FS) square micro- mechanical resonator based on silicon-on-insulator (SO1) technology is presented in this paper. In order to examine the improvement of quality factor as well as motional resistance Rx in this structure, the center-stem anchor is employed in this study. The benefit of anchoring the square in the center, which is the nodal point, is that the energy losses through the anchor can be minimized. Hence, a quality factor value of 2.0 million and the motional resistance of 8.2 k~ can be obtained with an FS mode resonator via finite element (FE) simulation. The results show the significance of the FS mode in this design, not only in its structure but also in its square-extensional mode and Lame-mode. Additionally, an SOI-based fabrication process is proposed to support the design.</description><subject>人脸</subject><subject>伸展模式</subject><subject>动态电阻</subject><subject>品质因数</subject><subject>微机械谐振器</subject><subject>溶胶</subject><subject>硅绝缘体</subject><subject>能量损失</subject><issn>1674-862X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpjYeA0NDM30bUwM4rgYOAtLs5MMjA1NDYzNzM34mSwc1Tw9Nf19ahSCPbP0XVKLE5NUXBLTE5VCM5ITSxSCC4sTSxKVfDNTC7Kz01NzkjMy0xOzFEISi3Oz0ssyS_iYWBNS8wpTuWF0twMim6uIc4euskZ-XnphZl56fEFRZm5iUWV8SaWhkaWBqZGxsSoAQAnijXq</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>Tan-Loc Nguyen Jing-Fu Bao Jun-Wen Jiang Yuan Ling Xin-Yi Li</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>2014</creationdate><title>A IO-MHz SOl-Based Face Shear Square Micromechanical Resonator</title><author>Tan-Loc Nguyen Jing-Fu Bao Jun-Wen Jiang Yuan Ling Xin-Yi Li</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_491290523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>人脸</topic><topic>伸展模式</topic><topic>动态电阻</topic><topic>品质因数</topic><topic>微机械谐振器</topic><topic>溶胶</topic><topic>硅绝缘体</topic><topic>能量损失</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tan-Loc Nguyen Jing-Fu Bao Jun-Wen Jiang Yuan Ling Xin-Yi Li</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>电子科技学刊:英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tan-Loc Nguyen Jing-Fu Bao Jun-Wen Jiang Yuan Ling Xin-Yi Li</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A IO-MHz SOl-Based Face Shear Square Micromechanical Resonator</atitle><jtitle>电子科技学刊:英文版</jtitle><addtitle>Journal of Electronic Science Technology</addtitle><date>2014</date><risdate>2014</risdate><volume>12</volume><issue>1</issue><spage>64</spage><epage>70</epage><pages>64-70</pages><issn>1674-862X</issn><abstract>A 10-MHz face shear (FS) square micro- mechanical resonator based on silicon-on-insulator (SO1) technology is presented in this paper. In order to examine the improvement of quality factor as well as motional resistance Rx in this structure, the center-stem anchor is employed in this study. The benefit of anchoring the square in the center, which is the nodal point, is that the energy losses through the anchor can be minimized. Hence, a quality factor value of 2.0 million and the motional resistance of 8.2 k~ can be obtained with an FS mode resonator via finite element (FE) simulation. The results show the significance of the FS mode in this design, not only in its structure but also in its square-extensional mode and Lame-mode. Additionally, an SOI-based fabrication process is proposed to support the design.</abstract></addata></record> |
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language | eng |
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subjects | 人脸 伸展模式 动态电阻 品质因数 微机械谐振器 溶胶 硅绝缘体 能量损失 |
title | A IO-MHz SOl-Based Face Shear Square Micromechanical Resonator |
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