Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:中国物理B:英文版 2014-04 (4), p.649-654
1. Verfasser: 朱乃伟 胡明 夏晓旭 韦晓莹 梁继然
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 654
container_issue 4
container_start_page 649
container_title 中国物理B:英文版
container_volume
creator 朱乃伟 胡明 夏晓旭 韦晓莹 梁继然
description The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow- up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-~C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.
doi_str_mv 10.1088/1674-1056/23/4/048108
format Article
fullrecord <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_49106781</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>49106781</cqvip_id><sourcerecordid>49106781</sourcerecordid><originalsourceid>FETCH-LOGICAL-c181t-6d35fd0308f46f902381dfc1302395ce85b2e3201586e6cb4de8e553118b74063</originalsourceid><addsrcrecordid>eNo9jtlKA0EURBtRMEY_QWg_YJx7p5fceZTgBoGIqI-Gnl6Slsxi9_iQv3cg4lMVh6qiGLtGuEUgKlEvZIGgdFmJUpYgacInbFaBokKQkKds9p85Zxc5fwFohErM2OdL8oNJZox9x03neNu7GKI9gj7wj3XFx13seIj7lk_stchmGHYxeZ5_mjxOXc-bA09miG6K-tSaPR9Sb33Ol-wsmH32V386Z-8P92_Lp2K1fnxe3q0Ki4RjoZ1QwYEAClKHenpG6IJFMblaWU-qqbyoABVpr20jnSevlECkZiFBizm7Oe7aXd9tv2O33QwptiYdNrJG0AtC8QvCxVVA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process</title><source>IOP Publishing Journals</source><creator>朱乃伟 胡明 夏晓旭 韦晓莹 梁继然</creator><creatorcontrib>朱乃伟 胡明 夏晓旭 韦晓莹 梁继然</creatorcontrib><description>The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow- up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-~C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>DOI: 10.1088/1674-1056/23/4/048108</identifier><language>eng</language><subject>THz-TDS ; VO2薄膜 ; X-射线光电子能谱 ; 修饰 ; 制备 ; 太赫兹时域光谱技术 ; 热加工 ; 蓝宝石衬底</subject><ispartof>中国物理B:英文版, 2014-04 (4), p.649-654</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>朱乃伟 胡明 夏晓旭 韦晓莹 梁继然</creatorcontrib><title>Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process</title><title>中国物理B:英文版</title><addtitle>Chinese Physics</addtitle><description>The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow- up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-~C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.</description><subject>THz-TDS</subject><subject>VO2薄膜</subject><subject>X-射线光电子能谱</subject><subject>修饰</subject><subject>制备</subject><subject>太赫兹时域光谱技术</subject><subject>热加工</subject><subject>蓝宝石衬底</subject><issn>1674-1056</issn><issn>2058-3834</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9jtlKA0EURBtRMEY_QWg_YJx7p5fceZTgBoGIqI-Gnl6Slsxi9_iQv3cg4lMVh6qiGLtGuEUgKlEvZIGgdFmJUpYgacInbFaBokKQkKds9p85Zxc5fwFohErM2OdL8oNJZox9x03neNu7GKI9gj7wj3XFx13seIj7lk_stchmGHYxeZ5_mjxOXc-bA09miG6K-tSaPR9Sb33Ol-wsmH32V386Z-8P92_Lp2K1fnxe3q0Ki4RjoZ1QwYEAClKHenpG6IJFMblaWU-qqbyoABVpr20jnSevlECkZiFBizm7Oe7aXd9tv2O33QwptiYdNrJG0AtC8QvCxVVA</recordid><startdate>20140401</startdate><enddate>20140401</enddate><creator>朱乃伟 胡明 夏晓旭 韦晓莹 梁继然</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>20140401</creationdate><title>Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process</title><author>朱乃伟 胡明 夏晓旭 韦晓莹 梁继然</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c181t-6d35fd0308f46f902381dfc1302395ce85b2e3201586e6cb4de8e553118b74063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>THz-TDS</topic><topic>VO2薄膜</topic><topic>X-射线光电子能谱</topic><topic>修饰</topic><topic>制备</topic><topic>太赫兹时域光谱技术</topic><topic>热加工</topic><topic>蓝宝石衬底</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>朱乃伟 胡明 夏晓旭 韦晓莹 梁继然</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国物理B:英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>朱乃伟 胡明 夏晓旭 韦晓莹 梁继然</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process</atitle><jtitle>中国物理B:英文版</jtitle><addtitle>Chinese Physics</addtitle><date>2014-04-01</date><risdate>2014</risdate><issue>4</issue><spage>649</spage><epage>654</epage><pages>649-654</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><abstract>The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow- up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-~C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.</abstract><doi>10.1088/1674-1056/23/4/048108</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1674-1056
ispartof 中国物理B:英文版, 2014-04 (4), p.649-654
issn 1674-1056
2058-3834
language eng
recordid cdi_chongqing_primary_49106781
source IOP Publishing Journals
subjects THz-TDS
VO2薄膜
X-射线光电子能谱
修饰
制备
太赫兹时域光谱技术
热加工
蓝宝石衬底
title Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T17%3A49%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Preparation%20and%20modification%20of%20VO2%20thin%20film%20on%20R-sapphire%20substrate%20by%20rapid%20thermal%20process&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86B%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E6%9C%B1%E4%B9%83%E4%BC%9F%20%E8%83%A1%E6%98%8E%20%E5%A4%8F%E6%99%93%E6%97%AD%20%E9%9F%A6%E6%99%93%E8%8E%B9%20%E6%A2%81%E7%BB%A7%E7%84%B6&rft.date=2014-04-01&rft.issue=4&rft.spage=649&rft.epage=654&rft.pages=649-654&rft.issn=1674-1056&rft.eissn=2058-3834&rft_id=info:doi/10.1088/1674-1056/23/4/048108&rft_dat=%3Cchongqing%3E49106781%3C/chongqing%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=49106781&rfr_iscdi=true