Temperature-dependent rectifying and photovoltaic characteristics of an oxygen-deficient Bi2Sr2Co2Oy/Si heterojunction

A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism u...

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Veröffentlicht in:中国物理B:英文版 2013-10 (10), p.500-503
1. Verfasser: 闫国英 白子龙 李慧玲 傅广生 刘富强 于威 王江龙 王淑芳
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description A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices.
doi_str_mv 10.1088/1674-1056/22/10/107301
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subjects 光伏特性
光生伏打效应
异质结
整流

温度依赖性
空间电荷限制电流
脉冲激光沉积
title Temperature-dependent rectifying and photovoltaic characteristics of an oxygen-deficient Bi2Sr2Co2Oy/Si heterojunction
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