A GaAs/GalnP dual junction solar cell grown by molecular beam epitaxy

A GaAs/GalnP dual junction solar cell grown by molecular beam epitaxy

We report the recent result of GaAs/GalnP dual-junction solar cells grown by all solid-state molecularbeam-epitaxy （MBE）. The device structure consists of a GaIn0.4sP homojunction grown epitaxially upon a GaAs homojunction, with an interconnected GaAs tunnel junction. A photovoltaic conversion effic...

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Veröffentlicht in:半导体学报：英文版 2013 (10), p.62-65
1. Verfasser: 代盼 陆书龙 季莲 何巍 边历峰 杨辉 有持佑之 吉田浩 内田史朗 M．Ikedaq
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GaAs
GaInP
光电转换效率
分子束外延生长
同质外延生长
太阳能电池
砷化镓
能量转换效率
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container_title 半导体学报：英文版
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creator 代盼 陆书龙 季莲 何巍 边历峰 杨辉 有持佑之 吉田浩 内田史朗 M．Ikedaq
description We report the recent result of GaAs/GalnP dual-junction solar cells grown by all solid-state molecularbeam-epitaxy （MBE）. The device structure consists of a GaIn0.4sP homojunction grown epitaxially upon a GaAs homojunction, with an interconnected GaAs tunnel junction. A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell, while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell, respectively. The energy loss mechanism of our GaAs/GalnP tandem dual-junction solar cells is discussed. It is demonstrated that the MBE-grown phosphide-containing Ⅲ-V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency.
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subjects GaAs
GaInP
光电转换效率
分子束外延生长
同质外延生长
太阳能电池
砷化镓
能量转换效率
title A GaAs/GalnP dual junction solar cell grown by molecular beam epitaxy
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