Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers

Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers

The electrical properties of the structure of GaN grown on an Si （111） substrate with low-temperature （LT） A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly du...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:中国物理B：英文版 2013 (8), p.690-693
1. Verfasser: 倪毅强 贺致远 钟健 姚尧 杨帆 向鹏 张佰君 刘扬
Format: Artikel
Sprache:eng
Schlagworte:
AIN
MOCVD生长
Si（111）衬底
低温
化学汽相淀积
夹层
氮化镓
电气性能
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 693
container_issue 8
container_start_page 690
container_title 中国物理B：英文版
container_volume
creator 倪毅强 贺致远 钟健 姚尧 杨帆 向鹏 张佰君 刘扬
description The electrical properties of the structure of GaN grown on an Si （111） substrate with low-temperature （LT） A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature （50 K） and may further influence the electrical behavior of this structure.
format Article
fullrecord <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_46730463</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>46730463</cqvip_id><sourcerecordid>46730463</sourcerecordid><originalsourceid>FETCH-chongqing_primary_467304633</originalsourceid><addsrcrecordid>eNqNzM1twjAYgGGrAokA3eFjAEs2Dg5XRPk7lB6KuCITOYkrY4fPjiI2gJ3YiRXKgQE4vZdH7wdJxmwypWIq0g5JuMxSytlE9kg_hD_GJGdjkZBqYXUe0eTKQo2-1hiNDuAL-P6Z779oib51sFJb8A5-DTzuV875436D0BxDRBWfujWxAutbGvXpeVCxQQ2zzRaMixqtumgMQ9ItlA3689UBGS0Xu_ma5pV35dm48lCjOSm8HFKZCZZKId4x_9DQSQE</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers</title><source>Institute of Physics Journals</source><creator>倪毅强 贺致远 钟健 姚尧 杨帆 向鹏 张佰君 刘扬</creator><creatorcontrib>倪毅强 贺致远 钟健 姚尧 杨帆 向鹏 张佰君 刘扬</creatorcontrib><description>The electrical properties of the structure of GaN grown on an Si （111） substrate with low-temperature （LT） A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature （50 K） and may further influence the electrical behavior of this structure.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><language>eng</language><subject>AIN ; MOCVD生长 ; Si（111）衬底 ; 低温 ; 化学汽相淀积 ; 夹层 ; 氮化镓 ; 电气性能</subject><ispartof>中国物理B：英文版, 2013 (8), p.690-693</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>倪毅强 贺致远 钟健 姚尧 杨帆 向鹏 张佰君 刘扬</creatorcontrib><title>Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers</title><title>中国物理B：英文版</title><addtitle>Chinese Physics</addtitle><description>The electrical properties of the structure of GaN grown on an Si （111） substrate with low-temperature （LT） A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature （50 K） and may further influence the electrical behavior of this structure.</description><subject>AIN</subject><subject>MOCVD生长</subject><subject>Si（111）衬底</subject><subject>低温</subject><subject>化学汽相淀积</subject><subject>夹层</subject><subject>氮化镓</subject><subject>电气性能</subject><issn>1674-1056</issn><issn>2058-3834</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqNzM1twjAYgGGrAokA3eFjAEs2Dg5XRPk7lB6KuCITOYkrY4fPjiI2gJ3YiRXKgQE4vZdH7wdJxmwypWIq0g5JuMxSytlE9kg_hD_GJGdjkZBqYXUe0eTKQo2-1hiNDuAL-P6Z779oib51sFJb8A5-DTzuV875436D0BxDRBWfujWxAutbGvXpeVCxQQ2zzRaMixqtumgMQ9ItlA3689UBGS0Xu_ma5pV35dm48lCjOSm8HFKZCZZKId4x_9DQSQE</recordid><startdate>2013</startdate><enddate>2013</enddate><creator>倪毅强 贺致远 钟健 姚尧 杨帆 向鹏 张佰君 刘扬</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>2013</creationdate><title>Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers</title><author>倪毅强 贺致远 钟健 姚尧 杨帆 向鹏 张佰君 刘扬</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_467304633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>AIN</topic><topic>MOCVD生长</topic><topic>Si（111）衬底</topic><topic>低温</topic><topic>化学汽相淀积</topic><topic>夹层</topic><topic>氮化镓</topic><topic>电气性能</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>倪毅强 贺致远 钟健 姚尧 杨帆 向鹏 张佰君 刘扬</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国物理B：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>倪毅强 贺致远 钟健 姚尧 杨帆 向鹏 张佰君 刘扬</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers</atitle><jtitle>中国物理B：英文版</jtitle><addtitle>Chinese Physics</addtitle><date>2013</date><risdate>2013</risdate><issue>8</issue><spage>690</spage><epage>693</epage><pages>690-693</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><abstract>The electrical properties of the structure of GaN grown on an Si （111） substrate with low-temperature （LT） A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature （50 K） and may further influence the electrical behavior of this structure.</abstract></addata></record>
fulltext fulltext
identifier ISSN: 1674-1056
ispartof 中国物理B：英文版, 2013 (8), p.690-693
issn 1674-1056
2058-3834
language eng
recordid cdi_chongqing_primary_46730463
source Institute of Physics Journals
subjects AIN
MOCVD生长
Si（111）衬底
低温
化学汽相淀积
夹层
氮化镓
电气性能
title Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T16%3A31%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20properties%20of%20MOCVD-grown%20GaN%20on%20Si%20%EF%BC%88111%EF%BC%89%20substrates%20with%20low-temperature%20AIN%20interlayers&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86B%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E5%80%AA%E6%AF%85%E5%BC%BA%20%E8%B4%BA%E8%87%B4%E8%BF%9C%20%E9%92%9F%E5%81%A5%20%E5%A7%9A%E5%B0%A7%20%E6%9D%A8%E5%B8%86%20%E5%90%91%E9%B9%8F%20%E5%BC%A0%E4%BD%B0%E5%90%9B%20%E5%88%98%E6%89%AC&rft.date=2013&rft.issue=8&rft.spage=690&rft.epage=693&rft.pages=690-693&rft.issn=1674-1056&rft.eissn=2058-3834&rft_id=info:doi/&rft_dat=%3Cchongqing%3E46730463%3C/chongqing%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=46730463&rfr_iscdi=true