Annealing effect on magnetic anisotropy in ultrathin（Ga,Mn）As

Annealing effect on magnetic anisotropy in ultrathin（Ga,Mn）As

We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance（PHR）.Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rot...

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Veröffentlicht in:中国物理B：英文版 2013 (2), p.469-473
1. Verfasser: 李炎勇 汪华锋 曹玉飞 王开友
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Sprache:eng
Schlagworte:
低温退火
单轴各向异性
测量范围
磁各向异性
超薄
退火效应
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creator 李炎勇 汪华锋 曹玉飞 王开友
description We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance（PHR）.Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields（below 1000 Gs,1 Gs = 10-4 T）,which can be explained by competition between Zeeman energy and magnetic anisotropic energy.It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one.The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing.This gives a useful way to tune the magnetic anisotropy of ultrathin（Ga,Mn）As devices.
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source IOP Publishing Journals
subjects 低温退火
单轴各向异性
测量范围
磁各向异性
超薄
退火效应
title Annealing effect on magnetic anisotropy in ultrathin（Ga,Mn）As
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