Development of silicon photonic devices for optical interconnects

Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the...

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Veröffentlicht in:中国科学通报:英文版 2013 (7), p.586-593
1. Verfasser: XIAO Xi LI ZhiYong CHU Tao XU Hao LI XianYao NEMKOVA Anastasia KANG Xiong YU YuDe YU JinZhong
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description Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the recent progress on fast silicon optical modulation, wavelength- insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%. Broadband sili- con-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s-1.
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subjects CMOS兼容
光子器件
光学互连
光电子集成
光耦合技术
开发

金属氧化物半导体
title Development of silicon photonic devices for optical interconnects
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