Fluorine-plasma surface treatment for gate forward leakage current reduction in AIGaN/GaN HEMTs

The gate forward leakage current in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented t...

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Veröffentlicht in:	半导体学报 2013 (2), p.37-40
1. Verfasser:	Chen Wanjun Zhang Jing Zhang Bo Chen Kevin Jing
Format:	Artikel
Sprache:	chi
Schlagworte:	AlGaN HEMT器件栅极氟漏电流等离子体处理等离子表面处理高电子迁移率晶体管
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description	The gate forward leakage current in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal-semiconductor barrier. Consequently, the gate forward leak- age current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied.
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In addition, the DC characteristics of the HEMT device with plasma treatment have been studied.</description><subject>AlGaN</subject><subject>HEMT器件</subject><subject>栅极</subject><subject>氟</subject><subject>漏电流</subject><subject>等离子体处理</subject><subject>等离子表面处理</subject><subject>高电子迁移率晶体管</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqNijEOgkAQAK_QRKL8YX0AEeWCUBoDYqEVPVlhwYtw4N4R4--VxAdYTGaKmQlnG-6lJ-NduBCuMerm-3EUBdL3HVGk7diz0uQNLZoOwYxcY0lgmdB2pC3UPUODlqZ4IVfQEj6wIShH5mlgqsbSql6D0nA4n_C6-QJZcsnNSsxrbA25Py_FOk3yY-aV9143T6WbYmDVIb8LKWUcyDgK_nk-oqBC_w</recordid><startdate>2013</startdate><enddate>2013</enddate><creator>Chen Wanjun Zhang Jing Zhang Bo Chen Kevin Jing</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>2013</creationdate><title>Fluorine-plasma surface treatment for gate forward leakage current reduction in AIGaN/GaN HEMTs</title><author>Chen Wanjun Zhang Jing Zhang Bo Chen Kevin Jing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_444934983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>chi</language><creationdate>2013</creationdate><topic>AlGaN</topic><topic>HEMT器件</topic><topic>栅极</topic><topic>氟</topic><topic>漏电流</topic><topic>等离子体处理</topic><topic>等离子表面处理</topic><topic>高电子迁移率晶体管</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen Wanjun Zhang Jing Zhang Bo Chen Kevin Jing</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>半导体学报</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen Wanjun Zhang Jing Zhang Bo Chen Kevin Jing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fluorine-plasma surface treatment for gate forward leakage current reduction in AIGaN/GaN HEMTs</atitle><jtitle>半导体学报</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2013</date><risdate>2013</risdate><issue>2</issue><spage>37</spage><epage>40</epage><pages>37-40</pages><issn>1674-4926</issn><abstract>The gate forward leakage current in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal-semiconductor barrier. Consequently, the gate forward leak- age current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied.</abstract></addata></record>
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subjects	AlGaN HEMT器件栅极氟漏电流等离子体处理等离子表面处理高电子迁移率晶体管
title	Fluorine-plasma surface treatment for gate forward leakage current reduction in AIGaN/GaN HEMTs
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