Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors
A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capaci...
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| Veröffentlicht in: | 中国物理B：英文版 2012-08, Vol.21 (8), p.537-541 |
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| container_title | 中国物理B：英文版 |
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| creator | 轩瑞杰 刘慧宣 |
| description | A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance （- 2.14 μF/cm2） directly bound up with mobile ions-induced EDL （sandwiched between the top and bottom electrodes） effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V. s, current on/off ration of 2 × 104, and subthreshold gate voltage swing （S = dVgs/d（logIds）） of 140 mV/decade. The threshold voltage Yth （0.1 V） is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors. |
| doi_str_mv | 10.1088/1674-1056/21/8/088104 |
| format | Article |
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An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance （- 2.14 μF/cm2） directly bound up with mobile ions-induced EDL （sandwiched between the top and bottom electrodes） effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V. s, current on/off ration of 2 × 104, and subthreshold gate voltage swing （S = dVgs/d（logIds）） of 140 mV/decade. The threshold voltage Yth （0.1 V） is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>DOI: 10.1088/1674-1056/21/8/088104</identifier><language>eng</language><subject>SiO2 ; SnO2 ; 低电压 ; 场效应晶体管 ; 电压门控 ; 纳米线 ; 质子导体 ; 锑掺杂</subject><ispartof>中国物理B：英文版, 2012-08, Vol.21 (8), p.537-541</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>轩瑞杰 刘慧宣</creatorcontrib><title>Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors</title><title>中国物理B：英文版</title><addtitle>Chinese Physics</addtitle><description>A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. 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| ispartof | 中国物理B：英文版, 2012-08, Vol.21 (8), p.537-541 |
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| source | IOP Publishing Journals |
| subjects | SiO2 SnO2 低电压 场效应晶体管 电压门控 纳米线 质子导体 锑掺杂 |
| title | Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors |
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