Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition

Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition

Based on X-ray photoelectron spectroscopy （XPS）, influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition （ALD） are investigated in this paper. The measured valence band offset （VBO） value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after anneali...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:中国物理B：英文版 2012-08, Vol.21 (8), p.498-502
1. Verfasser: 樊继斌 刘红侠 高博 马飞 卓青青 郝跃
Format: Artikel
Sprache:eng
Schlagworte:
HfO2薄膜
SiO2
X射线光电子能谱
内部电场
原子层沉积
氧化剂
能带结构
退火过程
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 502
container_issue 8
container_start_page 498
container_title 中国物理B：英文版
container_volume 21
creator 樊继斌 刘红侠 高博 马飞 卓青青 郝跃
description Based on X-ray photoelectron spectroscopy （XPS）, influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition （ALD） are investigated in this paper. The measured valence band offset （VBO） value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after the annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lewd the VBO values of H2O-based and O3-based HfO2 to vary in different ways, which fits with the variation of fiat band （VFB） voltage.
doi_str_mv 10.1088/1674-1056/21/8/087702
format Article
fullrecord <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_42911418</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>42911418</cqvip_id><sourcerecordid>42911418</sourcerecordid><originalsourceid>FETCH-LOGICAL-c111t-23e29cec5d2da3c9c67a2d25cda723b4035d19c33f70b66e9930822b25fd38853</originalsourceid><addsrcrecordid>eNo9jMtKxDAUQIMoWEc_QYgfUJt7b9OmSxnUGRiYja6HNI820iZjW8H5e8HX6izO4TB2C-IehFIFVHWZg5BVgVCoQqi6FnjGMhRS5aSoPGfZf3PJrub5TYgKBFLG-m30w4eLxvHkuQ3eu8nFhafPYHVcZp4iX3rHWx0t10Po4vitPd_4PXIfhnHm1h3THBZneXviekljMHzQJzf9mZDiNbvwepjdzS9X7PXp8WW9yXf75-36YZcbAFhyJIeNcUZatJpMY6pao0VprK6R2lKQtNAYIl-Ltqpc05BQiC1Kb0kpSSt29_M1fYrde4jd4TiFUU-nQ4kNQAmKvgAHSlm0</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition</title><source>Institute of Physics Journals</source><creator>樊继斌 刘红侠 高博 马飞 卓青青 郝跃</creator><creatorcontrib>樊继斌 刘红侠 高博 马飞 卓青青 郝跃</creatorcontrib><description>Based on X-ray photoelectron spectroscopy （XPS）, influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition （ALD） are investigated in this paper. The measured valence band offset （VBO） value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after the annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lewd the VBO values of H2O-based and O3-based HfO2 to vary in different ways, which fits with the variation of fiat band （VFB） voltage.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>DOI: 10.1088/1674-1056/21/8/087702</identifier><language>eng</language><subject>HfO2薄膜 ; SiO2 ; X射线光电子能谱 ; 内部电场 ; 原子层沉积 ; 氧化剂 ; 能带结构 ; 退火过程</subject><ispartof>中国物理B：英文版, 2012-08, Vol.21 (8), p.498-502</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>樊继斌 刘红侠 高博 马飞 卓青青 郝跃</creatorcontrib><title>Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition</title><title>中国物理B：英文版</title><addtitle>Chinese Physics</addtitle><description>Based on X-ray photoelectron spectroscopy （XPS）, influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition （ALD） are investigated in this paper. The measured valence band offset （VBO） value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after the annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lewd the VBO values of H2O-based and O3-based HfO2 to vary in different ways, which fits with the variation of fiat band （VFB） voltage.</description><subject>HfO2薄膜</subject><subject>SiO2</subject><subject>X射线光电子能谱</subject><subject>内部电场</subject><subject>原子层沉积</subject><subject>氧化剂</subject><subject>能带结构</subject><subject>退火过程</subject><issn>1674-1056</issn><issn>2058-3834</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNo9jMtKxDAUQIMoWEc_QYgfUJt7b9OmSxnUGRiYja6HNI820iZjW8H5e8HX6izO4TB2C-IehFIFVHWZg5BVgVCoQqi6FnjGMhRS5aSoPGfZf3PJrub5TYgKBFLG-m30w4eLxvHkuQ3eu8nFhafPYHVcZp4iX3rHWx0t10Po4vitPd_4PXIfhnHm1h3THBZneXviekljMHzQJzf9mZDiNbvwepjdzS9X7PXp8WW9yXf75-36YZcbAFhyJIeNcUZatJpMY6pao0VprK6R2lKQtNAYIl-Ltqpc05BQiC1Kb0kpSSt29_M1fYrde4jd4TiFUU-nQ4kNQAmKvgAHSlm0</recordid><startdate>20120801</startdate><enddate>20120801</enddate><creator>樊继斌 刘红侠 高博 马飞 卓青青 郝跃</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>20120801</creationdate><title>Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition</title><author>樊继斌 刘红侠 高博 马飞 卓青青 郝跃</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c111t-23e29cec5d2da3c9c67a2d25cda723b4035d19c33f70b66e9930822b25fd38853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>HfO2薄膜</topic><topic>SiO2</topic><topic>X射线光电子能谱</topic><topic>内部电场</topic><topic>原子层沉积</topic><topic>氧化剂</topic><topic>能带结构</topic><topic>退火过程</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>樊继斌 刘红侠 高博 马飞 卓青青 郝跃</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国物理B：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>樊继斌 刘红侠 高博 马飞 卓青青 郝跃</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition</atitle><jtitle>中国物理B：英文版</jtitle><addtitle>Chinese Physics</addtitle><date>2012-08-01</date><risdate>2012</risdate><volume>21</volume><issue>8</issue><spage>498</spage><epage>502</epage><pages>498-502</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><abstract>Based on X-ray photoelectron spectroscopy （XPS）, influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition （ALD） are investigated in this paper. The measured valence band offset （VBO） value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after the annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lewd the VBO values of H2O-based and O3-based HfO2 to vary in different ways, which fits with the variation of fiat band （VFB） voltage.</abstract><doi>10.1088/1674-1056/21/8/087702</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1674-1056
ispartof 中国物理B：英文版, 2012-08, Vol.21 (8), p.498-502
issn 1674-1056
2058-3834
language eng
recordid cdi_chongqing_primary_42911418
source Institute of Physics Journals
subjects HfO2薄膜
SiO2
X射线光电子能谱
内部电场
原子层沉积
氧化剂
能带结构
退火过程
title Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T12%3A16%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20different%20oxidants%20on%20the%20band%20alignment%20of%20HfO2%20films%20deposited%20by%20atomic%20layer%20deposition&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86B%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E6%A8%8A%E7%BB%A7%E6%96%8C%20%E5%88%98%E7%BA%A2%E4%BE%A0%20%E9%AB%98%E5%8D%9A%20%E9%A9%AC%E9%A3%9E%20%E5%8D%93%E9%9D%92%E9%9D%92%20%E9%83%9D%E8%B7%83&rft.date=2012-08-01&rft.volume=21&rft.issue=8&rft.spage=498&rft.epage=502&rft.pages=498-502&rft.issn=1674-1056&rft.eissn=2058-3834&rft_id=info:doi/10.1088/1674-1056/21/8/087702&rft_dat=%3Cchongqing%3E42911418%3C/chongqing%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=42911418&rfr_iscdi=true