Preparation and characterization of laser-irradiation induced amorphous for GeeSb2Tes phase-change materials
It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous (L-a) Ge2Sb2Te5 (GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper, by fabri- cating GST thin films on different substrates, we...
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Veröffentlicht in: | 中国科学:技术科学英文版 2011, Vol.54 (12), p.3404-3408 |
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container_title | 中国科学:技术科学英文版 |
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creator | ZHANG Lei HUANG Huan YAN ZhengGuang HAN XlaoDong WANG Yang ZHANG Ze WU YiQun |
description | It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous (L-a) Ge2Sb2Te5 (GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper, by fabri- cating GST thin films on different substrates, we exhibit an effective way of preparing L-a GST dots in submicron scale on various types of specially designed transmission electron microscope (TEM) grids. The structural characteristics of L-a GST in the form of pair distribution functions (PDF) can be achieved on single dots of L-a GST via selected area electron diffraction (SAED). This general approach would be convenient for precisely producing laser-irradiation induced materials in submicron scale for structural investigation. |
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fullrecord | <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_40119279</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>40119279</cqvip_id><sourcerecordid>40119279</sourcerecordid><originalsourceid>FETCH-chongqing_primary_401192793</originalsourceid><addsrcrecordid>eNqNTEsOgjAUbIwmEvUO9QAkLRCha-NnaSJ784QH1ECLr7DQ01uDB3A288nMzFggs50KpRJi7vUuTcI0juSSbZx7CI84U0ImAWsvhD0QDNoaDqbkReNdMSDp9xTairfgkEJNBKWeQm3KscCSQ2epb-zoeGWJnxCv9yhHx_vGT0L_ZWrkHXzvoHVrtqg84ebHK7Y9HvL92RetqZ_a1LeedAf0uiVCShWlKv6n8wGdxErL</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Preparation and characterization of laser-irradiation induced amorphous for GeeSb2Tes phase-change materials</title><source>SpringerLink Journals</source><source>Alma/SFX Local Collection</source><creator>ZHANG Lei HUANG Huan YAN ZhengGuang HAN XlaoDong WANG Yang ZHANG Ze WU YiQun</creator><creatorcontrib>ZHANG Lei HUANG Huan YAN ZhengGuang HAN XlaoDong WANG Yang ZHANG Ze WU YiQun</creatorcontrib><description>It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous (L-a) Ge2Sb2Te5 (GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper, by fabri- cating GST thin films on different substrates, we exhibit an effective way of preparing L-a GST dots in submicron scale on various types of specially designed transmission electron microscope (TEM) grids. The structural characteristics of L-a GST in the form of pair distribution functions (PDF) can be achieved on single dots of L-a GST via selected area electron diffraction (SAED). This general approach would be convenient for precisely producing laser-irradiation induced materials in submicron scale for structural investigation.</description><identifier>ISSN: 1674-7321</identifier><identifier>EISSN: 1869-1900</identifier><language>eng</language><subject>Ge2Sb2Te5 ; 制备 ; 无定形 ; 激光照射 ; 相变材料 ; 表征 ; 选区电子衍射 ; 透射电子显微镜</subject><ispartof>中国科学:技术科学英文版, 2011, Vol.54 (12), p.3404-3408</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/60110X/60110X.jpg</thumbnail><link.rule.ids>314,776,780,4010</link.rule.ids></links><search><creatorcontrib>ZHANG Lei HUANG Huan YAN ZhengGuang HAN XlaoDong WANG Yang ZHANG Ze WU YiQun</creatorcontrib><title>Preparation and characterization of laser-irradiation induced amorphous for GeeSb2Tes phase-change materials</title><title>中国科学:技术科学英文版</title><addtitle>SCIENCE CHINA Technological Sciences</addtitle><description>It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous (L-a) Ge2Sb2Te5 (GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper, by fabri- cating GST thin films on different substrates, we exhibit an effective way of preparing L-a GST dots in submicron scale on various types of specially designed transmission electron microscope (TEM) grids. The structural characteristics of L-a GST in the form of pair distribution functions (PDF) can be achieved on single dots of L-a GST via selected area electron diffraction (SAED). This general approach would be convenient for precisely producing laser-irradiation induced materials in submicron scale for structural investigation.</description><subject>Ge2Sb2Te5</subject><subject>制备</subject><subject>无定形</subject><subject>激光照射</subject><subject>相变材料</subject><subject>表征</subject><subject>选区电子衍射</subject><subject>透射电子显微镜</subject><issn>1674-7321</issn><issn>1869-1900</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqNTEsOgjAUbIwmEvUO9QAkLRCha-NnaSJ784QH1ECLr7DQ01uDB3A288nMzFggs50KpRJi7vUuTcI0juSSbZx7CI84U0ImAWsvhD0QDNoaDqbkReNdMSDp9xTairfgkEJNBKWeQm3KscCSQ2epb-zoeGWJnxCv9yhHx_vGT0L_ZWrkHXzvoHVrtqg84ebHK7Y9HvL92RetqZ_a1LeedAf0uiVCShWlKv6n8wGdxErL</recordid><startdate>2011</startdate><enddate>2011</enddate><creator>ZHANG Lei HUANG Huan YAN ZhengGuang HAN XlaoDong WANG Yang ZHANG Ze WU YiQun</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>2011</creationdate><title>Preparation and characterization of laser-irradiation induced amorphous for GeeSb2Tes phase-change materials</title><author>ZHANG Lei HUANG Huan YAN ZhengGuang HAN XlaoDong WANG Yang ZHANG Ze WU YiQun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_401192793</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Ge2Sb2Te5</topic><topic>制备</topic><topic>无定形</topic><topic>激光照射</topic><topic>相变材料</topic><topic>表征</topic><topic>选区电子衍射</topic><topic>透射电子显微镜</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ZHANG Lei HUANG Huan YAN ZhengGuang HAN XlaoDong WANG Yang ZHANG Ze WU YiQun</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国科学:技术科学英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ZHANG Lei HUANG Huan YAN ZhengGuang HAN XlaoDong WANG Yang ZHANG Ze WU YiQun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation and characterization of laser-irradiation induced amorphous for GeeSb2Tes phase-change materials</atitle><jtitle>中国科学:技术科学英文版</jtitle><addtitle>SCIENCE CHINA Technological Sciences</addtitle><date>2011</date><risdate>2011</risdate><volume>54</volume><issue>12</issue><spage>3404</spage><epage>3408</epage><pages>3404-3408</pages><issn>1674-7321</issn><eissn>1869-1900</eissn><abstract>It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous (L-a) Ge2Sb2Te5 (GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper, by fabri- cating GST thin films on different substrates, we exhibit an effective way of preparing L-a GST dots in submicron scale on various types of specially designed transmission electron microscope (TEM) grids. The structural characteristics of L-a GST in the form of pair distribution functions (PDF) can be achieved on single dots of L-a GST via selected area electron diffraction (SAED). This general approach would be convenient for precisely producing laser-irradiation induced materials in submicron scale for structural investigation.</abstract></addata></record> |
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source | SpringerLink Journals; Alma/SFX Local Collection |
subjects | Ge2Sb2Te5 制备 无定形 激光照射 相变材料 表征 选区电子衍射 透射电子显微镜 |
title | Preparation and characterization of laser-irradiation induced amorphous for GeeSb2Tes phase-change materials |
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