THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE-CHANNELING TECHNIQUE

THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE-CHANNELING TECHNIQUE

A combined PIXE-RBS channeling measurement system to examine Ⅲ-Ⅴ compound semiconductors has been established. Preliminary results on studying Si+ and Te+ implanted GaAs have been presented and discussed.

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Bibliographische Detailangaben
Veröffentlicht in:核技术：英文版 1990 (3), p.156-160
1. Verfasser: 刘惠珍 盛康龙 朱德彰 杨国华 朱福英 曹建清 唐立军
Format: Artikel
Sprache:eng
Schlagworte:
channeling
Compound
GaAs
implantation
Ion
PIXE
semiconductor
technique
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Zusammenfassung:A combined PIXE-RBS channeling measurement system to examine Ⅲ-Ⅴ compound semiconductors has been established. Preliminary results on studying Si+ and Te+ implanted GaAs have been presented and discussed.
ISSN:1001-8042
2210-3147