DEEP LEVELS IN ELECTRON-IRRADIATED SILICON CONTAINING LITHIUM

Using deep-level transient spectroscopy, the interaction between lithium (Li) and radiation defects has been studied in two aspects: the creation of Li-related defects and the effect of Li on the annealing of radiation defects. It has been pointed out that oxygen in silicon can restrain the interact...

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Veröffentlicht in:	中国科学：数学英文版 1990 (1), p.60-70
1. Verfasser:	姚秀琛 元民华 贾陶涛 罗守礼 蓝李桥 秦国刚
Format:	Artikel
Sprache:	eng
Schlagworte:	containing deep electr level litnium on-irradiation silicon
Online-Zugang:	Volltext
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