DEEP LEVELS IN ELECTRON-IRRADIATED SILICON CONTAINING LITHIUM

Using deep-level transient spectroscopy, the interaction between lithium (Li) and radiation defects has been studied in two aspects: the creation of Li-related defects and the effect of Li on the annealing of radiation defects. It has been pointed out that oxygen in silicon can restrain the interact...

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Veröffentlicht in:	中国科学：数学英文版 1990 (1), p.60-70
1. Verfasser:	姚秀琛元民华贾陶涛罗守礼蓝李桥秦国刚
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Schlagworte:	containing deep electr level litnium on-irradiation silicon
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creator	姚秀琛元民华贾陶涛罗守礼蓝李桥秦国刚
description	Using deep-level transient spectroscopy, the interaction between lithium (Li) and radiation defects has been studied in two aspects: the creation of Li-related defects and the effect of Li on the annealing of radiation defects. It has been pointed out that oxygen in silicon can restrain the interaction between Li and radiation defects. Only when the concentration of Li is not far less than that of oxygen, can this interaction take effect. The Li-related defects E(0.17), E(0.21) E(0.38), E(0.50), H(0.42) and H(0.47) have been observed under different conditions. The similarity and difference between lithium and hydrogen in their interaction with radiation defects have been compared.
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subjects	containing deep electr level litnium on-irradiation silicon
title	DEEP LEVELS IN ELECTRON-IRRADIATED SILICON CONTAINING LITHIUM
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