DOPED SnO2 FILMS GROWN BY THE METALLORGANIC CHEMICAL VAPOUR DEPOSITION TECHNIQUE

DOPED SnO2 FILMS GROWN BY THE METALLORGANIC CHEMICAL VAPOUR DEPOSITION TECHNIQUE

1 INTRODUCTIONStannic oxide as a wide-band gap semiconductor（Eg≈3.5eV）,has high transparency in thevisible spectral region（index of refraction,n≈1.9）and resistance to acids and bases at roomtemperature.The SnO2 thin film.the most useful form in application,has been prepared by avariety of physical a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:中国化学工程学报：英文版 1993 (4), p.62-65
1. Verfasser: 罗文秀 任鹏程 谭忠恪
Format: Artikel
Sprache:eng
Schlagworte:
chemical
deposition
doped
growth
Metallorganic
oxide
photoelectrochemical
properties
stannic
thin
tin
vapor
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:1 INTRODUCTIONStannic oxide as a wide-band gap semiconductor（Eg≈3.5eV）,has high transparency in thevisible spectral region（index of refraction,n≈1.9）and resistance to acids and bases at roomtemperature.The SnO2 thin film.the most useful form in application,has been prepared by avariety of physical and chemical deposition processes.It has been found that undoped SnO2films have high resistivity(about 108--15Ω·cm)at room temperature[1].For manyapplications requiring not too low sheet resistance,nonstoichiometric（oxygen-deficient）tin
ISSN:1004-9541
2210-321X