Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells

Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells

Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon （μc-Si：H） for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a significant effect on the structures of the films. The obtained Al3Ni2 film was amorphou...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Plasma science & technology 2011-10, Vol.13 (5), p.600-603
1. Verfasser: 岳红云 吴爱民 秦福文 李廷举
Format: Artikel
Sprache:eng
Schlagworte:
合金相
多晶薄膜
弥散
微晶硅
探针系统
柔性
深度剖面
薄膜太阳能电池
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 603
container_issue 5
container_start_page 600
container_title Plasma science & technology
container_volume 13
creator 岳红云 吴爱民 秦福文 李廷举
description Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon （μc-Si：H） for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a significant effect on the structures of the films. The obtained Al3Ni2 film was amorphous, while polycrystalline films were obtained when the ratio of aluminum to nickel was 1：1 and 2：3. An auger electron spectroscope and four-point probe system were applied to test the resistance to the interdiffusion between aluminum and silicon, as well as the conductivities of the AlxNiy barriers. The data of auger depth profile showed that the content of silicon was the minimum in the aluminum layer after sputtering for 4 min using AlNi thin film as the barrier layer. Compared to other AlxNiy alloys, the AlNi thin film possessed the lowest sheet resistance.
doi_str_mv 10.1088/1009-0630/13/5/17
format Article
fullrecord <record><control><sourceid>iop_chong</sourceid><recordid>TN_cdi_chongqing_primary_39623707</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>39623707</cqvip_id><sourcerecordid>10_1088_1009_0630_13_5_17</sourcerecordid><originalsourceid>FETCH-LOGICAL-c251t-5f34323d68d78138f165011979b53ce49fc6a37fe94f2d7f6ac3829d1dbc1b133</originalsourceid><addsrcrecordid>eNptj7FOwzAQhj2ARCk8AJvZGAjx5ZLYHkuhgFSVoWW2nMRujdykxK3UvD2JQB0Q06-7_7uTPkJugD0AEyIGxmTEcmQxYJzFwM_I6LS7IJchfDKWpVLgiCyW-0PV0aamE39cuK4P33SB6kCfnLWH4PrqUbetM22grqYzb46u8IauNsPk_JYuG69bOjXehytybrUP5vo3x-Rj9ryavkbz95e36WQelUkG-yizmGKCVS4qLgCFhTxjAJLLIsPSpNKWuUZujUxtUnGb6xJFIiuoihIKQByT-5-_rtmpXeu2uu0UMDX4q8FVDa4KUGUKeI_f_Yf_wdSusj16-4OWm6Zef7l6fTpAmSfIGcdvWLBmIw</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells</title><source>IOP Publishing Journals</source><creator>岳红云 吴爱民 秦福文 李廷举</creator><creatorcontrib>岳红云 吴爱民 秦福文 李廷举</creatorcontrib><description>Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon （μc-Si：H） for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a significant effect on the structures of the films. The obtained Al3Ni2 film was amorphous, while polycrystalline films were obtained when the ratio of aluminum to nickel was 1：1 and 2：3. An auger electron spectroscope and four-point probe system were applied to test the resistance to the interdiffusion between aluminum and silicon, as well as the conductivities of the AlxNiy barriers. The data of auger depth profile showed that the content of silicon was the minimum in the aluminum layer after sputtering for 4 min using AlNi thin film as the barrier layer. Compared to other AlxNiy alloys, the AlNi thin film possessed the lowest sheet resistance.</description><identifier>ISSN: 1009-0630</identifier><identifier>DOI: 10.1088/1009-0630/13/5/17</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>合金相 ; 多晶薄膜 ; 弥散 ; 微晶硅 ; 探针系统 ; 柔性 ; 深度剖面 ; 薄膜太阳能电池</subject><ispartof>Plasma science &amp; technology, 2011-10, Vol.13 (5), p.600-603</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/84262X/84262X.jpg</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1009-0630/13/5/17/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53910</link.rule.ids></links><search><creatorcontrib>岳红云 吴爱民 秦福文 李廷举</creatorcontrib><title>Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells</title><title>Plasma science &amp; technology</title><addtitle>Plasma Science ＆ Technology</addtitle><description>Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon （μc-Si：H） for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a significant effect on the structures of the films. The obtained Al3Ni2 film was amorphous, while polycrystalline films were obtained when the ratio of aluminum to nickel was 1：1 and 2：3. An auger electron spectroscope and four-point probe system were applied to test the resistance to the interdiffusion between aluminum and silicon, as well as the conductivities of the AlxNiy barriers. The data of auger depth profile showed that the content of silicon was the minimum in the aluminum layer after sputtering for 4 min using AlNi thin film as the barrier layer. Compared to other AlxNiy alloys, the AlNi thin film possessed the lowest sheet resistance.</description><subject>合金相</subject><subject>多晶薄膜</subject><subject>弥散</subject><subject>微晶硅</subject><subject>探针系统</subject><subject>柔性</subject><subject>深度剖面</subject><subject>薄膜太阳能电池</subject><issn>1009-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNptj7FOwzAQhj2ARCk8AJvZGAjx5ZLYHkuhgFSVoWW2nMRujdykxK3UvD2JQB0Q06-7_7uTPkJugD0AEyIGxmTEcmQxYJzFwM_I6LS7IJchfDKWpVLgiCyW-0PV0aamE39cuK4P33SB6kCfnLWH4PrqUbetM22grqYzb46u8IauNsPk_JYuG69bOjXehytybrUP5vo3x-Rj9ryavkbz95e36WQelUkG-yizmGKCVS4qLgCFhTxjAJLLIsPSpNKWuUZujUxtUnGb6xJFIiuoihIKQByT-5-_rtmpXeu2uu0UMDX4q8FVDa4KUGUKeI_f_Yf_wdSusj16-4OWm6Zef7l6fTpAmSfIGcdvWLBmIw</recordid><startdate>20111001</startdate><enddate>20111001</enddate><creator>岳红云 吴爱民 秦福文 李廷举</creator><general>IOP Publishing</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>20111001</creationdate><title>Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells</title><author>岳红云 吴爱民 秦福文 李廷举</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c251t-5f34323d68d78138f165011979b53ce49fc6a37fe94f2d7f6ac3829d1dbc1b133</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>合金相</topic><topic>多晶薄膜</topic><topic>弥散</topic><topic>微晶硅</topic><topic>探针系统</topic><topic>柔性</topic><topic>深度剖面</topic><topic>薄膜太阳能电池</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>岳红云 吴爱民 秦福文 李廷举</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>Plasma science &amp; technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>岳红云 吴爱民 秦福文 李廷举</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells</atitle><jtitle>Plasma science &amp; technology</jtitle><addtitle>Plasma Science ＆ Technology</addtitle><date>2011-10-01</date><risdate>2011</risdate><volume>13</volume><issue>5</issue><spage>600</spage><epage>603</epage><pages>600-603</pages><issn>1009-0630</issn><abstract>Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon （μc-Si：H） for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a significant effect on the structures of the films. The obtained Al3Ni2 film was amorphous, while polycrystalline films were obtained when the ratio of aluminum to nickel was 1：1 and 2：3. An auger electron spectroscope and four-point probe system were applied to test the resistance to the interdiffusion between aluminum and silicon, as well as the conductivities of the AlxNiy barriers. The data of auger depth profile showed that the content of silicon was the minimum in the aluminum layer after sputtering for 4 min using AlNi thin film as the barrier layer. Compared to other AlxNiy alloys, the AlNi thin film possessed the lowest sheet resistance.</abstract><pub>IOP Publishing</pub><doi>10.1088/1009-0630/13/5/17</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1009-0630
ispartof Plasma science & technology, 2011-10, Vol.13 (5), p.600-603
issn 1009-0630
language eng
recordid cdi_chongqing_primary_39623707
source IOP Publishing Journals
subjects 合金相
多晶薄膜
弥散
微晶硅
探针系统
柔性
深度剖面
薄膜太阳能电池
title Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T11%3A54%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_chong&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20on%20AlxNiy%20Alloys%20as%20Diffusion%20Barriers%20in%20Flexible%20Thin%20Film%20Solar%20Cells&rft.jtitle=Plasma%20science%20&%20technology&rft.au=%E5%B2%B3%E7%BA%A2%E4%BA%91%20%E5%90%B4%E7%88%B1%E6%B0%91%20%E7%A7%A6%E7%A6%8F%E6%96%87%20%E6%9D%8E%E5%BB%B7%E4%B8%BE&rft.date=2011-10-01&rft.volume=13&rft.issue=5&rft.spage=600&rft.epage=603&rft.pages=600-603&rft.issn=1009-0630&rft_id=info:doi/10.1088/1009-0630/13/5/17&rft_dat=%3Ciop_chong%3E10_1088_1009_0630_13_5_17%3C/iop_chong%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=39623707&rfr_iscdi=true