Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements.Application to n-InP
Based on current voltage（I-Vg） and capacitance voltage（C-Vg） measurements,a reliable procedure is proposed to determine the effective surface potential Vd（Vg） in Schottky diodes.In the framework of thermionic emission,our analysis includes both the effect of the series resistance and the ideality fa...
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| Veröffentlicht in: | 半导体学报 2011, Vol.32 (10), p.39-43 |
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| container_title | 半导体学报 |
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| creator | Ali Ahaitouf Abdelaziz Ahaitouf Jean Paul Salvestrini Hussein Srour |
| description | Based on current voltage（I-Vg） and capacitance voltage（C-Vg） measurements,a reliable procedure is proposed to determine the effective surface potential Vd（Vg） in Schottky diodes.In the framework of thermionic emission,our analysis includes both the effect of the series resistance and the ideality factor,even voltage dependent. This technique is applied to n-type indium phosphide（n-InP） Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C-Vg measurements.The study clearly shows that the depletion width and the flat band barrier height deduced from C-Vg,which are important parameters directly related to the surface potential in the semiconductor,should be estimated within our approach to obtain more reliable information. |
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This technique is applied to n-type indium phosphide（n-InP） Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C-Vg measurements.The study clearly shows that the depletion width and the flat band barrier height deduced from C-Vg,which are important parameters directly related to the surface potential in the semiconductor,should be estimated within our approach to obtain more reliable information.</description><identifier>ISSN: 1674-4926</identifier><language>chi</language><subject>InP ; 热离子发射 ; 电位测定 ; 电压依赖性 ; 电容电压 ; 电流电压 ; 肖特基二极管 ; 表面电位</subject><ispartof>半导体学报, 2011, Vol.32 (10), p.39-43</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,776,780,4009</link.rule.ids></links><search><creatorcontrib>Ali Ahaitouf Abdelaziz Ahaitouf Jean Paul Salvestrini Hussein Srour</creatorcontrib><title>Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements.Application to n-InP</title><title>半导体学报</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>Based on current voltage（I-Vg） and capacitance voltage（C-Vg） measurements,a reliable procedure is proposed to determine the effective surface potential Vd（Vg） in Schottky diodes.In the framework of thermionic emission,our analysis includes both the effect of the series resistance and the ideality factor,even voltage dependent. 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This technique is applied to n-type indium phosphide（n-InP） Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C-Vg measurements.The study clearly shows that the depletion width and the flat band barrier height deduced from C-Vg,which are important parameters directly related to the surface potential in the semiconductor,should be estimated within our approach to obtain more reliable information.</abstract></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1674-4926 |
| ispartof | 半导体学报, 2011, Vol.32 (10), p.39-43 |
| issn | 1674-4926 |
| language | chi |
| recordid | cdi_chongqing_primary_39451799 |
| source | IOP Publishing Journals; Alma/SFX Local Collection |
| subjects | InP 热离子发射 电位测定 电压依赖性 电容电压 电流电压 肖特基二极管 表面电位 |
| title | Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements.Application to n-InP |
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