Study of hybrid orientation structure wafer
Two types of 5μm thick hybrid orientation structure wafers,which were integrated by（110）or（100） orientation silicon wafers as the substrate,have been investigated for 15-40 V voltage ICs and MEMS sensor applications.They have been obtained mainly by SOI wafer bonding and a non-selective epitaxy tech...
Gespeichert in:
| Veröffentlicht in: | Journal of semiconductors 2011-06, Vol.32 (6), p.21-23 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 23 |
|---|---|
| container_issue | 6 |
| container_start_page | 21 |
| container_title | Journal of semiconductors |
| container_volume | 32 |
| creator | 谭开洲 张静 徐世六 张正璠 杨永晖 陈俊 梁涛 |
| description | Two types of 5μm thick hybrid orientation structure wafers,which were integrated by（110）or（100） orientation silicon wafers as the substrate,have been investigated for 15-40 V voltage ICs and MEMS sensor applications.They have been obtained mainly by SOI wafer bonding and a non-selective epitaxy technique,and have been presented in China for the first time.The thickness of BOX SiO2 buried in wafer is 220 nm.It has been found that the quality of hybrid orientation structure with（100）wafer substrate is better than that with（110）wafer substrate by＂Sirtl defect etching of HOSW＂. |
| doi_str_mv | 10.1088/1674-4926/32/6/063002 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_chong</sourceid><recordid>TN_cdi_chongqing_primary_38149195</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>38149195</cqvip_id><sourcerecordid>1439745861</sourcerecordid><originalsourceid>FETCH-LOGICAL-c390t-9e9a18e6f486aa9d84b3d66ba9bf455e97e907c1aff609a71f120789258624103</originalsourceid><addsrcrecordid>eNqFkF1LwzAUhnOh4Jj7CUK9E7T25KNpcinDLxh4oV6HtE22wNZ0SYv039vRMW8GXh04PM_5eBG6wfCIQYgM84KlTBKeUZLxDDgFIBdodupfoUWMrgSQQlAGMEP3n11fD4m3yWYog6sTH5xpOt053ySxC33V9cEkP9qacI0urd5GszjWOfp-ef5avqWrj9f35dMqraiELpVGaiwMt0xwrWUtWElrzkstS8vy3MjCSCgqrK3lIHWBLSZQCElywQnDQOfobprbBr_vTezUzsXKbLe6Mb6PCjMqCzbSeETzCa2CjzEYq9rgdjoMCoM6ZKIOv6vD74oSxdWUyeg9TJ7z7Z9yDlVtbUcczuD_bLg9XrbxzXrvmvVJpAIziWVOfwExs3vj</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1439745861</pqid></control><display><type>article</type><title>Study of hybrid orientation structure wafer</title><source>IOP Publishing Journals</source><source>Alma/SFX Local Collection</source><creator>谭开洲 张静 徐世六 张正璠 杨永晖 陈俊 梁涛</creator><creatorcontrib>谭开洲 张静 徐世六 张正璠 杨永晖 陈俊 梁涛</creatorcontrib><description>Two types of 5μm thick hybrid orientation structure wafers,which were integrated by（110）or（100） orientation silicon wafers as the substrate,have been investigated for 15-40 V voltage ICs and MEMS sensor applications.They have been obtained mainly by SOI wafer bonding and a non-selective epitaxy technique,and have been presented in China for the first time.The thickness of BOX SiO2 buried in wafer is 220 nm.It has been found that the quality of hybrid orientation structure with（100）wafer substrate is better than that with（110）wafer substrate by＂Sirtl defect etching of HOSW＂.</description><identifier>ISSN: 1674-4926</identifier><identifier>DOI: 10.1088/1674-4926/32/6/063002</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>Bonding ; China ; Electric potential ; MEMS ; Orientation ; Semiconductors ; Silicon substrates ; SOI晶圆 ; Voltage ; Wafers ; 二氧化硅 ; 传感器应用 ; 取向结构 ; 外延技术 ; 混合 ; 非选择性</subject><ispartof>Journal of semiconductors, 2011-06, Vol.32 (6), p.21-23</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c390t-9e9a18e6f486aa9d84b3d66ba9bf455e97e907c1aff609a71f120789258624103</citedby><cites>FETCH-LOGICAL-c390t-9e9a18e6f486aa9d84b3d66ba9bf455e97e907c1aff609a71f120789258624103</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1674-4926/32/6/063002/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53885</link.rule.ids></links><search><creatorcontrib>谭开洲 张静 徐世六 张正璠 杨永晖 陈俊 梁涛</creatorcontrib><title>Study of hybrid orientation structure wafer</title><title>Journal of semiconductors</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>Two types of 5μm thick hybrid orientation structure wafers,which were integrated by（110）or（100） orientation silicon wafers as the substrate,have been investigated for 15-40 V voltage ICs and MEMS sensor applications.They have been obtained mainly by SOI wafer bonding and a non-selective epitaxy technique,and have been presented in China for the first time.The thickness of BOX SiO2 buried in wafer is 220 nm.It has been found that the quality of hybrid orientation structure with（100）wafer substrate is better than that with（110）wafer substrate by＂Sirtl defect etching of HOSW＂.</description><subject>Bonding</subject><subject>China</subject><subject>Electric potential</subject><subject>MEMS</subject><subject>Orientation</subject><subject>Semiconductors</subject><subject>Silicon substrates</subject><subject>SOI晶圆</subject><subject>Voltage</subject><subject>Wafers</subject><subject>二氧化硅</subject><subject>传感器应用</subject><subject>取向结构</subject><subject>外延技术</subject><subject>混合</subject><subject>非选择性</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkF1LwzAUhnOh4Jj7CUK9E7T25KNpcinDLxh4oV6HtE22wNZ0SYv039vRMW8GXh04PM_5eBG6wfCIQYgM84KlTBKeUZLxDDgFIBdodupfoUWMrgSQQlAGMEP3n11fD4m3yWYog6sTH5xpOt053ySxC33V9cEkP9qacI0urd5GszjWOfp-ef5avqWrj9f35dMqraiELpVGaiwMt0xwrWUtWElrzkstS8vy3MjCSCgqrK3lIHWBLSZQCElywQnDQOfobprbBr_vTezUzsXKbLe6Mb6PCjMqCzbSeETzCa2CjzEYq9rgdjoMCoM6ZKIOv6vD74oSxdWUyeg9TJ7z7Z9yDlVtbUcczuD_bLg9XrbxzXrvmvVJpAIziWVOfwExs3vj</recordid><startdate>20110601</startdate><enddate>20110601</enddate><creator>谭开洲 张静 徐世六 张正璠 杨永晖 陈俊 梁涛</creator><general>IOP Publishing</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20110601</creationdate><title>Study of hybrid orientation structure wafer</title><author>谭开洲 张静 徐世六 张正璠 杨永晖 陈俊 梁涛</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c390t-9e9a18e6f486aa9d84b3d66ba9bf455e97e907c1aff609a71f120789258624103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Bonding</topic><topic>China</topic><topic>Electric potential</topic><topic>MEMS</topic><topic>Orientation</topic><topic>Semiconductors</topic><topic>Silicon substrates</topic><topic>SOI晶圆</topic><topic>Voltage</topic><topic>Wafers</topic><topic>二氧化硅</topic><topic>传感器应用</topic><topic>取向结构</topic><topic>外延技术</topic><topic>混合</topic><topic>非选择性</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>谭开洲 张静 徐世六 张正璠 杨永晖 陈俊 梁涛</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of semiconductors</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>谭开洲 张静 徐世六 张正璠 杨永晖 陈俊 梁涛</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of hybrid orientation structure wafer</atitle><jtitle>Journal of semiconductors</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2011-06-01</date><risdate>2011</risdate><volume>32</volume><issue>6</issue><spage>21</spage><epage>23</epage><pages>21-23</pages><issn>1674-4926</issn><abstract>Two types of 5μm thick hybrid orientation structure wafers,which were integrated by（110）or（100） orientation silicon wafers as the substrate,have been investigated for 15-40 V voltage ICs and MEMS sensor applications.They have been obtained mainly by SOI wafer bonding and a non-selective epitaxy technique,and have been presented in China for the first time.The thickness of BOX SiO2 buried in wafer is 220 nm.It has been found that the quality of hybrid orientation structure with（100）wafer substrate is better than that with（110）wafer substrate by＂Sirtl defect etching of HOSW＂.</abstract><pub>IOP Publishing</pub><doi>10.1088/1674-4926/32/6/063002</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1674-4926 |
| ispartof | Journal of semiconductors, 2011-06, Vol.32 (6), p.21-23 |
| issn | 1674-4926 |
| language | eng |
| recordid | cdi_chongqing_primary_38149195 |
| source | IOP Publishing Journals; Alma/SFX Local Collection |
| subjects | Bonding China Electric potential MEMS Orientation Semiconductors Silicon substrates SOI晶圆 Voltage Wafers 二氧化硅 传感器应用 取向结构 外延技术 混合 非选择性 |
| title | Study of hybrid orientation structure wafer |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T18%3A42%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_chong&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20of%20hybrid%20orientation%20structure%20wafer&rft.jtitle=Journal%20of%20semiconductors&rft.au=%E8%B0%AD%E5%BC%80%E6%B4%B2%20%E5%BC%A0%E9%9D%99%20%E5%BE%90%E4%B8%96%E5%85%AD%20%E5%BC%A0%E6%AD%A3%E7%92%A0%20%E6%9D%A8%E6%B0%B8%E6%99%96%20%E9%99%88%E4%BF%8A%20%E6%A2%81%E6%B6%9B&rft.date=2011-06-01&rft.volume=32&rft.issue=6&rft.spage=21&rft.epage=23&rft.pages=21-23&rft.issn=1674-4926&rft_id=info:doi/10.1088/1674-4926/32/6/063002&rft_dat=%3Cproquest_chong%3E1439745861%3C/proquest_chong%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1439745861&rft_id=info:pmid/&rft_cqvip_id=38149195&rfr_iscdi=true |