Deposition of textured diamond films on Si (100) substrates via microwave plasma chemical vapor deposition

The possibility of diamond films used as new high-temperature, high-frequency and high-power semiconductor materials is one of the most important application prospects of diamondfilms. However, the random crystal orientation, large amounts of grain boundaries and defectsof the polycrystal diamond fi...

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Veröffentlicht in:	中国科学通报：英文版 1995 (9), p.727-728
1. Verfasser:	张文军胡博韩立张仿清陈光华
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Sprache:	eng
Schlagworte:	bias diamond structure substrate textured
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creator	张文军胡博韩立张仿清陈光华
description	The possibility of diamond films used as new high-temperature, high-frequency and high-power semiconductor materials is one of the most important application prospects of diamondfilms. However, the random crystal orientation, large amounts of grain boundaries and defectsof the polycrystal diamond films greatly affect the properties of the polycrystalline diamondfilms and make them unsuitable in the high-quality electronic devices, so in the recent fewyears, many people have been devoted to the study of epitexial diamond films. In 1992,
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fullrecord	<record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_3001226471</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>3001226471</cqvip_id><sourcerecordid>3001226471</sourcerecordid><originalsourceid>FETCH-chongqing_primary_30012264713</originalsourceid><addsrcrecordid>eNqNjj0PgkAQRK_QRKP8h01stCA5DpRQ-xF77ckKB67hOLw9Uf-9FMbaapJ5k5cZiamS2TrMVBpPRMB8k1JGSaYSmU7Fbac7y-TJtmAr8PrlH06XUBIa25ZQUWMYBngiWEZSroAfF_YOvWboCcFQ4ewTew1dg2wQiqseOmygx846KH_-uRhX2LAOvjkTi8P-vD2GxdW29Z3aOu8cGXTvPB4eKrVJ0ij-b_UBridH4Q</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Deposition of textured diamond films on Si (100) substrates via microwave plasma chemical vapor deposition</title><source>Alma/SFX Local Collection</source><creator>张文军胡博韩立张仿清陈光华</creator><creatorcontrib>张文军胡博韩立张仿清陈光华</creatorcontrib><description>The possibility of diamond films used as new high-temperature, high-frequency and high-power semiconductor materials is one of the most important application prospects of diamondfilms. However, the random crystal orientation, large amounts of grain boundaries and defectsof the polycrystal diamond films greatly affect the properties of the polycrystalline diamondfilms and make them unsuitable in the high-quality electronic devices, so in the recent fewyears, many people have been devoted to the study of epitexial diamond films. In 1992,</description><identifier>ISSN: 2095-9273</identifier><language>eng</language><subject>bias ; diamond ; structure ; substrate ; textured</subject><ispartof>中国科学通报：英文版, 1995 (9), p.727-728</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/86894X/86894X.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>张文军胡博韩立张仿清陈光华</creatorcontrib><title>Deposition of textured diamond films on Si (100) substrates via microwave plasma chemical vapor deposition</title><title>中国科学通报：英文版</title><addtitle>Chinese Science Bulletin</addtitle><description>The possibility of diamond films used as new high-temperature, high-frequency and high-power semiconductor materials is one of the most important application prospects of diamondfilms. However, the random crystal orientation, large amounts of grain boundaries and defectsof the polycrystal diamond films greatly affect the properties of the polycrystalline diamondfilms and make them unsuitable in the high-quality electronic devices, so in the recent fewyears, many people have been devoted to the study of epitexial diamond films. In 1992,</description><subject>bias</subject><subject>diamond</subject><subject>structure</subject><subject>substrate</subject><subject>textured</subject><issn>2095-9273</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNqNjj0PgkAQRK_QRKP8h01stCA5DpRQ-xF77ckKB67hOLw9Uf-9FMbaapJ5k5cZiamS2TrMVBpPRMB8k1JGSaYSmU7Fbac7y-TJtmAr8PrlH06XUBIa25ZQUWMYBngiWEZSroAfF_YOvWboCcFQ4ewTew1dg2wQiqseOmygx846KH_-uRhX2LAOvjkTi8P-vD2GxdW29Z3aOu8cGXTvPB4eKrVJ0ij-b_UBridH4Q</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>张文军胡博韩立张仿清陈光华</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>1995</creationdate><title>Deposition of textured diamond films on Si (100) substrates via microwave plasma chemical vapor deposition</title><author>张文军胡博韩立张仿清陈光华</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_30012264713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>bias</topic><topic>diamond</topic><topic>structure</topic><topic>substrate</topic><topic>textured</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>张文军胡博韩立张仿清陈光华</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国科学通报：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>张文军胡博韩立张仿清陈光华</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Deposition of textured diamond films on Si (100) substrates via microwave plasma chemical vapor deposition</atitle><jtitle>中国科学通报：英文版</jtitle><addtitle>Chinese Science Bulletin</addtitle><date>1995</date><risdate>1995</risdate><issue>9</issue><spage>727</spage><epage>728</epage><pages>727-728</pages><issn>2095-9273</issn><abstract>The possibility of diamond films used as new high-temperature, high-frequency and high-power semiconductor materials is one of the most important application prospects of diamondfilms. However, the random crystal orientation, large amounts of grain boundaries and defectsof the polycrystal diamond films greatly affect the properties of the polycrystalline diamondfilms and make them unsuitable in the high-quality electronic devices, so in the recent fewyears, many people have been devoted to the study of epitexial diamond films. In 1992,</abstract></addata></record>
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identifier	ISSN: 2095-9273
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source	Alma/SFX Local Collection
subjects	bias diamond structure substrate textured
title	Deposition of textured diamond films on Si (100) substrates via microwave plasma chemical vapor deposition
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T06%3A27%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Deposition%20of%20textured%20diamond%20films%20on%20Si%20(100)%20substrates%20via%20microwave%20plasma%20chemical%20vapor%20deposition&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%A7%91%E5%AD%A6%E9%80%9A%E6%8A%A5%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E5%BC%A0%E6%96%87%E5%86%9B%20%E8%83%A1%E5%8D%9A%20%E9%9F%A9%E7%AB%8B%20%E5%BC%A0%E4%BB%BF%E6%B8%85%20%E9%99%88%E5%85%89%E5%8D%8E&rft.date=1995&rft.issue=9&rft.spage=727&rft.epage=728&rft.pages=727-728&rft.issn=2095-9273&rft_id=info:doi/&rft_dat=%3Cchongqing%3E3001226471%3C/chongqing%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=3001226471&rfr_iscdi=true