Stability of Mo/Si and Pd/Si multilayers irradiated by synchrotron radiation

Recently, soft X-ray optics was developed rapidly as a result of many synchrotron radi-ation （SR） facilities constructed and applied. But the SR with high energy density willmake the temperature rise of inserted elements very high. Because of the acceleration effect of chemical reaction caused by radiation, the stability of periodic multilayers which areused as reflective and dispersive elements in SR should be studied carefully. Jiang et al.reported that there were interfacial reactions and grains growth in Mo/Si multilayer when itwas annealed above 400℃, causing the intensity of X-ray diffraction decreased （especiallythe high-order peaks, whose intensity could change several times）. Yin et al. reportedthe same phenomena in Pd/Si multilayer above 200℃, and Tu et al. found the Pd filmcould react with c-Si to form Pd2Si from 100 to 700℃.