THE INFLUENCE OF INTERACTION POTENTIALS ON COMPUTER SIMULATION RESULTS OF SPUTTERING
In all studies of the interaction of energetic particles with solids, the interatomic potential plays an important role. In many processes it is the dominant factor in the events which lead to backscattering, sputtering, radiation damage and to the spatial distributions of implanted ions and recoili...
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Veröffentlicht in: | 中国科学通报:英文版 1992 (22), p.1877-1880 |
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creator | 邵其鋆 潘正瑛 霍裕昆 陈建新 |
description | In all studies of the interaction of energetic particles with solids, the interatomic potential plays an important role. In many processes it is the dominant factor in the events which lead to backscattering, sputtering, radiation damage and to the spatial distributions of implanted ions and recoiling atoms. The reason for this is that there is the relationship between the scattering angle θ(ε, b) in the CM system and the interatomic potential V(x) as follows: |
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In many processes it is the dominant factor in the events which lead to backscattering, sputtering, radiation damage and to the spatial distributions of implanted ions and recoiling atoms. The reason for this is that there is the relationship between the scattering angle θ(ε, b) in the CM system and the interatomic potential V(x) as follows:</description><identifier>ISSN: 2095-9273</identifier><language>eng</language><subject>Carlo ; interaction ; Monte ; potential ; simulation ; sputtering</subject><ispartof>中国科学通报:英文版, 1992 (22), p.1877-1880</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/86894X/86894X.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>邵其鋆 潘正瑛 霍裕昆 陈建新</creatorcontrib><title>THE INFLUENCE OF INTERACTION POTENTIALS ON COMPUTER SIMULATION RESULTS OF SPUTTERING</title><title>中国科学通报:英文版</title><addtitle>Chinese Science Bulletin</addtitle><description>In all studies of the interaction of energetic particles with solids, the interatomic potential plays an important role. In many processes it is the dominant factor in the events which lead to backscattering, sputtering, radiation damage and to the spatial distributions of implanted ions and recoiling atoms. The reason for this is that there is the relationship between the scattering angle θ(ε, b) in the CM system and the interatomic potential V(x) as follows:</description><subject>Carlo</subject><subject>interaction</subject><subject>Monte</subject><subject>potential</subject><subject>simulation</subject><subject>sputtering</subject><issn>2095-9273</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNqNi9EKgjAYRndRkJTvMOhamEuRXcqYOZibuH_XIlFmlJVe9fat6AG6-jic8y1QQAlLI0az3QqF83whhMQJownJAgRQCix1oZzQXGBTeADR5Byk0bg2IDTIXFnsiZuqdl5iKyun8m_RCOsU2M_Reumt1PsNWp6663wMf7tG20IAL6PD-T72z2Hs28c03Lrp1caEpDRmCUl3_1VvT0c4Ow</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>邵其鋆 潘正瑛 霍裕昆 陈建新</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>1992</creationdate><title>THE INFLUENCE OF INTERACTION POTENTIALS ON COMPUTER SIMULATION RESULTS OF SPUTTERING</title><author>邵其鋆 潘正瑛 霍裕昆 陈建新</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_10052194053</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Carlo</topic><topic>interaction</topic><topic>Monte</topic><topic>potential</topic><topic>simulation</topic><topic>sputtering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>邵其鋆 潘正瑛 霍裕昆 陈建新</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国科学通报:英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>邵其鋆 潘正瑛 霍裕昆 陈建新</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>THE INFLUENCE OF INTERACTION POTENTIALS ON COMPUTER SIMULATION RESULTS OF SPUTTERING</atitle><jtitle>中国科学通报:英文版</jtitle><addtitle>Chinese Science Bulletin</addtitle><date>1992</date><risdate>1992</risdate><issue>22</issue><spage>1877</spage><epage>1880</epage><pages>1877-1880</pages><issn>2095-9273</issn><abstract>In all studies of the interaction of energetic particles with solids, the interatomic potential plays an important role. In many processes it is the dominant factor in the events which lead to backscattering, sputtering, radiation damage and to the spatial distributions of implanted ions and recoiling atoms. The reason for this is that there is the relationship between the scattering angle θ(ε, b) in the CM system and the interatomic potential V(x) as follows:</abstract></addata></record> |
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identifier | ISSN: 2095-9273 |
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issn | 2095-9273 |
language | eng |
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source | Alma/SFX Local Collection |
subjects | Carlo interaction Monte potential simulation sputtering |
title | THE INFLUENCE OF INTERACTION POTENTIALS ON COMPUTER SIMULATION RESULTS OF SPUTTERING |
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