Study and optimal simulation of 4H-SiC floating junction Schottky barrier diodes＇ structures and electric properties

Study and optimal simulation of 4H-SiC floating junction Schottky barrier diodes＇ structures and electric properties

This paper stuides the structures of 4H SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featu...

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Veröffentlicht in:Chinese physics B 2010-10, Vol.19 (10), p.505-509
Hauptverfasser: Ya-Gong, Nan, Hong-Bin, Pu, Lin, Cao, Jie, Ren
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Sprache:eng
Schlagworte:
击穿电压
模拟器
电性能
电气特性
碳化硅
结构参数
肖特基势垒二极管
通态电阻
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creator Ya-Gong, Nan
Hong-Bin, Pu
Lin, Cao
Jie, Ren
description This paper stuides the structures of 4H SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 mΩ.cm2 when the Baliga figure of merit value of 13.1 GW/cm2 is achieved.
doi_str_mv 10.1088/1674-1056/19/10/107304
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subjects 击穿电压
模拟器
电性能
电气特性
碳化硅
结构参数
肖特基势垒二极管
通态电阻
title Study and optimal simulation of 4H-SiC floating junction Schottky barrier diodes＇ structures and electric properties
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